MRF7S16150HSR3 Freescale Semiconductor, MRF7S16150HSR3 Datasheet - Page 7
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MRF7S16150HSR3
Manufacturer Part Number
MRF7S16150HSR3
Description
MOSFET RF N-CH NI-780S
Manufacturer
Freescale Semiconductor
Datasheet
1.MRF7S16150HR3.pdf
(12 pages)
Specifications of MRF7S16150HSR3
Transistor Type
N-Channel
Frequency
1.6GHz
Gain
19.7dB
Voltage - Rated
65V
Current Rating
10µA
Current - Test
1.5A
Voltage - Test
28V
Power - Output
32W
Package / Case
NI-780S
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
32W
Power Gain (typ)@vds
19.7dB
Frequency (min)
1.6GHz
Frequency (max)
1.7GHz
Package Type
NI-780S
Pin Count
3
Input Capacitance (typ)@vds
363@28VpF
Output Capacitance (typ)@vds
585@28VpF
Reverse Capacitance (typ)
1.09@28VpF
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
25.4%
Mounting
Surface Mount
Mode Of Operation
1-Carrier OFDM/WIMAX
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MRF7S16150HSR3
Manufacturer:
TRIQUINT
Quantity:
101
Part Number:
MRF7S16150HSR3
Manufacturer:
FREESCALE
Quantity:
20 000
RF Device Data
Freescale Semiconductor
−10
−20
−30
−40
−50
−60
−70
21
20
19
18
17
16
15
14
1
1
Figure 7. Intermodulation Distortion Products
V
f1 = 1625 MHz, f2 = 1635 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
G
Figure 10. Power Gain and Drain Efficiency
DD
ps
η
5th Order
D
= 28 Vdc, I
P
versus CW Output Power
P
out
out
DQ
T
, OUTPUT POWER (WATTS) CW
C
versus Output Power
, OUTPUT POWER (WATTS) PEP
= 1500 mA
7th Order
= −30_C
25_C
85_C
10
10
3rd Order
60
55
50
45
40
35
30
25
20
15
10
5
0
V
I
f = 1630 MHz
DQ
1
DD
Figure 9. WiMAX, ACPR, Power Gain and Drain
ACPR
= 1500 mA
V
f = 1630 MHz, 802.16d, 64 QAM
4 Bursts, 7 MHz Channel
Bandwidth, Input Signal PAR = 9.5 dB
@ 0.01% Probability on CCDF
G
= 28 Vdc
DD
ps
100
100
TYPICAL CHARACTERISTICS
= 28 Vdc, I
85_C
Efficiency versus Output Power
η
−30_C
P
D
DQ
out
25_C
, OUTPUT POWER (WATTS) CW
= 1500 mA
400
400
70
60
50
40
30
20
10
0
10
3
/
4
−10
−20
−30
−40
−50
−60
21
20
19
18
17
16
15
0
1
0
Figure 8. Intermodulation Distortion Products
IM7−L
IM7−U
V
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 1630 MHz
85_C
DD
Figure 11. Power Gain versus Output Power
IM5−U
= 28 Vdc, P
T
85_C
C
100
= −30_C
IM5−L
−30_C
25_C
P
−30_C
out
out
versus Tone Spacing
TWO−TONE SPACING (MHz)
MRF7S16150HR3 MRF7S16150HSR3
25_C
, OUTPUT POWER (WATTS) CW
= 180 W (PEP), I
100
300
IM3−U
IM3−L
−15
−20
−25
−30
−35
−40
−45
−50
−55
−60
−65
−70
−75
10
V
DD
DQ
= 24 V
= 1500 mA
200
I
f = 1630 MHz
DQ
= 1500 mA
28 V
32 V
100
300
7