MRF7S16150HSR3 Freescale Semiconductor, MRF7S16150HSR3 Datasheet - Page 10
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MRF7S16150HSR3
Manufacturer Part Number
MRF7S16150HSR3
Description
MOSFET RF N-CH NI-780S
Manufacturer
Freescale Semiconductor
Datasheet
1.MRF7S16150HR3.pdf
(12 pages)
Specifications of MRF7S16150HSR3
Transistor Type
N-Channel
Frequency
1.6GHz
Gain
19.7dB
Voltage - Rated
65V
Current Rating
10µA
Current - Test
1.5A
Voltage - Test
28V
Power - Output
32W
Package / Case
NI-780S
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
32W
Power Gain (typ)@vds
19.7dB
Frequency (min)
1.6GHz
Frequency (max)
1.7GHz
Package Type
NI-780S
Pin Count
3
Input Capacitance (typ)@vds
363@28VpF
Output Capacitance (typ)@vds
585@28VpF
Reverse Capacitance (typ)
1.09@28VpF
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
25.4%
Mounting
Surface Mount
Mode Of Operation
1-Carrier OFDM/WIMAX
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MRF7S16150HSR3
Manufacturer:
TRIQUINT
Quantity:
101
Part Number:
MRF7S16150HSR3
Manufacturer:
FREESCALE
Quantity:
20 000
10
MRF7S16150HR3 MRF7S16150HSR3
H
A
(FLANGE)
(FLANGE)
4X
E
(FLANGE)
B
H
B
U
B
B
A
E
bbb
bbb
(FLANGE)
(FLANGE)
M
M
A
A
D
T
G
T
D
A
A
1
2
1
2
M
M
B
3
B
2X
N
M
M
M
M
N
T
K
3
(LID)
(INSULATOR)
bbb
ccc
(LID)
(INSULATOR)
bbb
SEATING
PLANE
ccc
C
C
K
4X
(LID)
M
M
2X
M
M
T
Z
T
T
T
T
SEATING
PLANE
Q
A
A
bbb
A
A
M
M
M
M
M
B
B
PACKAGE DIMENSIONS
B
B
T
M
M
M
M
A
MRF7S16150HSR3
MRF7S16150HR3
CASE 465A - 06
M
CASE 465 - 06
B
ISSUE G
ISSUE H
NI - 780S
NI - 780
M
aaa
ccc
aaa
ccc
M
M
M
M
T
T
T
T
A
A
A
A
M
M
M
M
R
R
S
S
B
B
B
B
(LID)
(INSULATOR)
(LID)
(INSULATOR)
M
M
M
M
F
F
NOTES:
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
Y14.5M−1994.
FROM PACKAGE BODY.
Y14.5M−1994.
FROM PACKAGE BODY.
bbb
STYLE 1:
STYLE 1:
DIM
aaa
ccc
DIM
aaa
bbb
ccc
G
M
Q
A
B
C
D
E
F
H
K
N
R
S
A
B
C
D
E
H
K
M
N
R
S
U
F
Z
PIN 1. DRAIN
PIN 1. DRAIN
1.335
0.380
0.125
0.495
0.035
0.003
0.057
0.170
0.774
0.772
0.365
0.365
2. GATE
3. SOURCE
2. GATE
5. SOURCE
0.805
0.380
0.125
0.495
0.035
0.003
0.057
0.170
0.774
0.772
0.365
0.365
MIN
.118
MIN
1.100 BSC
0.005 REF
0.010 REF
0.015 REF
−−−
−−−
0.005 REF
0.010 REF
0.015 REF
INCHES
INCHES
1.345
0.390
0.170
0.505
0.045
0.006
0.067
0.210
0.786
0.788
0.375
0.375
MAX
0.815
0.390
0.170
0.505
0.045
0.006
0.067
0.210
0.786
0.788
0.375
0.375
0.040
0.030
.138
MAX
Freescale Semiconductor
33.91
12.57
19.66
19.60
MILLIMETERS
20.45
12.57
19.61
19.61
MIN
9.65
3.18
0.89
0.08
1.45
4.32
3.00
9.27
9.27
MILLIMETERS
MIN
9.65
3.18
0.89
0.08
1.45
4.32
9.27
9.27
27.94 BSC
0.127 REF
0.254 REF
0.381 REF
−−−
−−−
0.127 REF
0.254 REF
0.381 REF
MAX
34.16
12.83
19.96
20.00
RF Device Data
20.70
12.83
20.02
20.02
MAX
9.91
4.32
1.14
0.15
1.70
5.33
3.51
9.53
9.52
9.91
4.32
1.14
0.15
1.70
5.33
9.53
9.52
1.02
0.76