MRF6S23140HR3 Freescale Semiconductor, MRF6S23140HR3 Datasheet - Page 9
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MRF6S23140HR3
Manufacturer Part Number
MRF6S23140HR3
Description
MOSFET RF N-CHAN 28W 28W NI-880
Manufacturer
Freescale Semiconductor
Datasheet
1.MRF6S23140HR3.pdf
(12 pages)
Specifications of MRF6S23140HR3
Transistor Type
N-Channel
Frequency
2.39GHz
Gain
15.2dB
Voltage - Rated
68V
Current Rating
10µA
Current - Test
1.3A
Voltage - Test
28V
Power - Output
28W
Package / Case
NI-880
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
68V
Output Power (max)
28W
Power Gain (typ)@vds
15.2dB
Frequency (min)
2.3GHz
Frequency (max)
2.4GHz
Package Type
NI-880
Pin Count
3
Reverse Capacitance (typ)
2@28VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
25%
Mounting
Screw
Mode Of Operation
2-Carrier W-CDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
RF Device Data
Freescale Semiconductor
f = 2300 MHz
f = 2400 MHz
Figure 15. Series Equivalent Source and Load Impedance
Z
o
= 25
Z
load
Input
Matching
Network
Z
Z
source
load
2300
2310
2320
2330
2340
2350
2360
2370
2380
2390
2400
MHz
f
V
DD
= Test circuit impedance as measured from
= Test circuit impedance as measured
= 28 Vdc, I
Z
gate to ground.
from drain to ground.
source
12.92 + j6.65
13.06 + j6.73
13.21 + j6.80
13.37 + j6.87
13.53 + j6.94
13.70 + j7.01
13.88 + j7.08
14.06 + j7.14
14.25 + j7.21
14.45 + j7.27
14.66 + j7.33
f = 2300 MHz
Z
DQ
Device
Under
Test
source
W
= 1300 mA, P
Z
Z
source
load
out
= 28 W Avg.
1.05 - j2.88
1.04 - j2.82
1.03 - j2.76
1.01 - j2.70
1.00 - j2.64
0.99 - j2.58
0.97 - j2.52
0.96 - j2.46
0.95 - j2.40
0.94 - j2.34
0.93 - j2.28
f = 2400 MHz
Z
load
W
Output
Matching
Network
MRF6S23140HR3 MRF6S23140HSR3
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