MRF6S23140HR3 Freescale Semiconductor, MRF6S23140HR3 Datasheet - Page 11
![MOSFET RF N-CHAN 28W 28W NI-880](/photos/40/60/406014/ni-880-3_sml.jpg)
MRF6S23140HR3
Manufacturer Part Number
MRF6S23140HR3
Description
MOSFET RF N-CHAN 28W 28W NI-880
Manufacturer
Freescale Semiconductor
Datasheet
1.MRF6S23140HR3.pdf
(12 pages)
Specifications of MRF6S23140HR3
Transistor Type
N-Channel
Frequency
2.39GHz
Gain
15.2dB
Voltage - Rated
68V
Current Rating
10µA
Current - Test
1.3A
Voltage - Test
28V
Power - Output
28W
Package / Case
NI-880
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
68V
Output Power (max)
28W
Power Gain (typ)@vds
15.2dB
Frequency (min)
2.3GHz
Frequency (max)
2.4GHz
Package Type
NI-880
Pin Count
3
Reverse Capacitance (typ)
2@28VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
25%
Mounting
Screw
Mode Of Operation
2-Carrier W-CDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
RF Device Data
Freescale Semiconductor
Application Notes
Engineering Bulletins
Revision
Refer to the following documents to aid your design process.
The following table summarizes revisions to this document.
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
EB212: Using Data Sheet Impedances for RF LDMOS Devices
2
Dec. 2008
Date
Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13232, p. 1, 2
Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality
is standard, p. 1
Operating Junction Temperature increased from 200 C to 225 C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
Corrected V
Functional Test”, On Characteristics table, p. 2
Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part
numbers, p. 3
Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 7
Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps
operating characteristics and location of MTTF calculator for device, p. 7
Added Product Documentation and Revision History, p. 11
DS
to V
PRODUCT DOCUMENTATION
DD
in the RF test condition voltage callout for V
REVISION HISTORY
Description
MRF6S23140HR3 MRF6S23140HSR3
GS(Q)
, and added “Measured in
2
and listed
11