MRF6S23140HR3 Freescale Semiconductor, MRF6S23140HR3 Datasheet - Page 11

• Manufacturer Part Number: MRF6S23140HR3
• Description: MOSFET RF N-CHAN 28W 28W NI-880
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S23140HR3

• Transistor Type: N-Channel
• Frequency: 2.39GHz
• Gain: 15.2dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 1.3A
• Voltage - Test: 28V
• Power - Output: 28W
• Package / Case: NI-880
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 68V
• Output Power (max): 28W
• Power Gain (typ)@vds: 15.2dB
• Frequency (min): 2.3GHz
• Frequency (max): 2.4GHz
• Package Type: NI-880
• Pin Count: 3
• Reverse Capacitance (typ): 2@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 25%
• Mounting: Screw
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

RF Device Data
Freescale Semiconductor
Application Notes
Engineering Bulletins
Revision
Refer to the following documents to aid your design process.
The following table summarizes revisions to this document.
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
EB212: Using Data Sheet Impedances for RF LDMOS Devices
2
Dec. 2008
Date
Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13232, p. 1, 2
Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality
is standard, p. 1
Operating Junction Temperature increased from 200 C to 225 C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
Corrected V
Functional Test”, On Characteristics table, p. 2
Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part
numbers, p. 3
Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 7
Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps
operating characteristics and location of MTTF calculator for device, p. 7
Added Product Documentation and Revision History, p. 11
DS
to V
PRODUCT DOCUMENTATION
DD
in the RF test condition voltage callout for V
REVISION HISTORY
Description
MRF6S23140HR3 MRF6S23140HSR3
GS(Q)
, and added “Measured in
2
and listed
11