MRF6S23140HR3 Freescale Semiconductor, MRF6S23140HR3 Datasheet - Page 7

• Manufacturer Part Number: MRF6S23140HR3
• Description: MOSFET RF N-CHAN 28W 28W NI-880
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S23140HR3

• Transistor Type: N-Channel
• Frequency: 2.39GHz
• Gain: 15.2dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 1.3A
• Voltage - Test: 28V
• Power - Output: 28W
• Package / Case: NI-880
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 68V
• Output Power (max): 28W
• Power Gain (typ)@vds: 15.2dB
• Frequency (min): 2.3GHz
• Frequency (max): 2.4GHz
• Package Type: NI-880
• Pin Count: 3
• Reverse Capacitance (typ): 2@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 25%
• Mounting: Screw
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

RF Device Data
Freescale Semiconductor
17
16
15
14
13
12
11
0.5
Figure 10. Power Gain and Drain Efficiency
V
I
f = 2350 MHz
DQ
DD
1
= 1300 mA
= 28 Vdc
T
25_C
C
85_C
= −30_C
P
out
versus Output Power
, OUTPUT POWER (WATTS) CW
10
G
ps
D
10
10
10
10
Figure 12. MTTF Factor versus Junction Temperature
8
7
6
5
90
This above graph displays calculated MTTF in hours when the device
is operated at V
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
110
TYPICAL CHARACTERISTICS
100
−30_C
T
130
DD
J
, JUNCTION TEMPERATURE ( C)
25_C
85_C
= 28 Vdc, P
300
150
60
50
40
30
20
10
0
out
170
= 28 W Avg., and
16
15
14
13
12
11
190
0
Figure 11. Power Gain versus Output Power
210
D
= 25%.
50
230
P
out
MRF6S23140HR3 MRF6S23140HSR3
, OUTPUT POWER (WATTS) CW
250
100
V
DD
= 24 V
150
28 V
I
f = 2350 MHz
DQ
= 1300 mA
200
32 V
250
7