MRF6S23140HR3 Freescale Semiconductor, MRF6S23140HR3 Datasheet - Page 7
![MOSFET RF N-CHAN 28W 28W NI-880](/photos/40/60/406014/ni-880-3_sml.jpg)
MRF6S23140HR3
Manufacturer Part Number
MRF6S23140HR3
Description
MOSFET RF N-CHAN 28W 28W NI-880
Manufacturer
Freescale Semiconductor
Datasheet
1.MRF6S23140HR3.pdf
(12 pages)
Specifications of MRF6S23140HR3
Transistor Type
N-Channel
Frequency
2.39GHz
Gain
15.2dB
Voltage - Rated
68V
Current Rating
10µA
Current - Test
1.3A
Voltage - Test
28V
Power - Output
28W
Package / Case
NI-880
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
68V
Output Power (max)
28W
Power Gain (typ)@vds
15.2dB
Frequency (min)
2.3GHz
Frequency (max)
2.4GHz
Package Type
NI-880
Pin Count
3
Reverse Capacitance (typ)
2@28VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
25%
Mounting
Screw
Mode Of Operation
2-Carrier W-CDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
RF Device Data
Freescale Semiconductor
17
16
15
14
13
12
11
0.5
Figure 10. Power Gain and Drain Efficiency
V
I
f = 2350 MHz
DQ
DD
1
= 1300 mA
= 28 Vdc
T
25_C
C
85_C
= −30_C
P
out
versus Output Power
, OUTPUT POWER (WATTS) CW
10
G
ps
D
10
10
10
10
Figure 12. MTTF Factor versus Junction Temperature
8
7
6
5
90
This above graph displays calculated MTTF in hours when the device
is operated at V
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
110
TYPICAL CHARACTERISTICS
100
−30_C
T
130
DD
J
, JUNCTION TEMPERATURE ( C)
25_C
85_C
= 28 Vdc, P
300
150
60
50
40
30
20
10
0
out
170
= 28 W Avg., and
16
15
14
13
12
11
190
0
Figure 11. Power Gain versus Output Power
210
D
= 25%.
50
230
P
out
MRF6S23140HR3 MRF6S23140HSR3
, OUTPUT POWER (WATTS) CW
250
100
V
DD
= 24 V
150
28 V
I
f = 2350 MHz
DQ
= 1300 mA
200
32 V
250
7