MRF7S21080HSR3 Freescale Semiconductor, MRF7S21080HSR3 Datasheet - Page 9

• Manufacturer Part Number: MRF7S21080HSR3
• Description: MOSFET RF N-CH 22W NI-780S
• Manufacturer: Freescale Semiconductor

Specifications of MRF7S21080HSR3

• Transistor Type: N-Channel
• Frequency: 2.11GHz
• Gain: 18dB
• Voltage - Rated: 65V
• Current Rating: 10µA
• Current - Test: 800mA
• Voltage - Test: 28V
• Power - Output: 22W
• Package / Case: NI-780S
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 22W
• Power Gain (typ)@vds: 18dB
• Frequency (min): 2.11GHz
• Frequency (max): 2.17GHz
• Package Type: NI-780S
• Pin Count: 3
• Input Capacitance (typ)@vds: 160@28VpF
• Output Capacitance (typ)@vds: 296@28VpF
• Reverse Capacitance (typ): 0.64@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 32%
• Mounting: Surface Mount
• Mode Of Operation: 1-Carrier W-CDMA/CDMA/TD-SCDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

RF Device Data
Freescale Semiconductor
f = 2040 MHz
Figure 16. Series Equivalent Source and Load Impedance
f = 2220 MHz
f = 2060 MHz
Input
Matching
Network
Z
Z
source
load
2060
2080
2100
2120
2140
2160
2180
2200
2220
MHz
f
V
Z
DD
= Test circuit impedance as measured from
= Test circuit impedance as measured
load
= 28 Vdc, I
gate to ground.
from drain to ground.
Z
source
7.066 - j10.796
6.954 - j10.526
6.857 - j10.260
6.745 - j9.980
6.668 - j9.728
6.588 - j9.462
6.403 - j8.892
7.16 - j11.074
6.511 - j9.203
f = 2220 MHz
Z
source
DQ
Device
Under
Test
W
f = 2060 MHz
= 800 mA, P
Z
source
Z
Z
o
out
= 25 Ω
load
4.403 - j6.809
4.275 - j6.662
4.147 - j6.515
4.017 - j6.375
3.889 - j6.233
3.764 - j6.126
3.642 - j6.016
3.519 - j5.895
3.401 - j5.774
= 22 W Avg.
Z
load
W
Output
Matching
Network
MRF7S21080HR3 MRF7S21080HSR3
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