MRF7S21080HSR3 Freescale Semiconductor, MRF7S21080HSR3 Datasheet - Page 11

• Manufacturer Part Number: MRF7S21080HSR3
• Description: MOSFET RF N-CH 22W NI-780S
• Manufacturer: Freescale Semiconductor

Specifications of MRF7S21080HSR3

• Transistor Type: N-Channel
• Frequency: 2.11GHz
• Gain: 18dB
• Voltage - Rated: 65V
• Current Rating: 10µA
• Current - Test: 800mA
• Voltage - Test: 28V
• Power - Output: 22W
• Package / Case: NI-780S
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 22W
• Power Gain (typ)@vds: 18dB
• Frequency (min): 2.11GHz
• Frequency (max): 2.17GHz
• Package Type: NI-780S
• Pin Count: 3
• Input Capacitance (typ)@vds: 160@28VpF
• Output Capacitance (typ)@vds: 296@28VpF
• Reverse Capacitance (typ): 0.64@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 32%
• Mounting: Surface Mount
• Mode Of Operation: 1-Carrier W-CDMA/CDMA/TD-SCDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

RF Device Data
Freescale Semiconductor
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Revision
Refer to the following documents to aid your design process.
The following table summarizes revisions to this document.
0
Nov. 2007
Date
• Initial Release of Data Sheet
PRODUCT DOCUMENTATION
REVISION HISTORY
Description
MRF7S21080HR3 MRF7S21080HSR3
11