MRF7S21080HSR3 Freescale Semiconductor, MRF7S21080HSR3 Datasheet - Page 11
![MOSFET RF N-CH 22W NI-780S](/photos/40/60/406012/ni-780s-3_sml.jpg)
MRF7S21080HSR3
Manufacturer Part Number
MRF7S21080HSR3
Description
MOSFET RF N-CH 22W NI-780S
Manufacturer
Freescale Semiconductor
Datasheet
1.MRF7S21080HR3.pdf
(12 pages)
Specifications of MRF7S21080HSR3
Transistor Type
N-Channel
Frequency
2.11GHz
Gain
18dB
Voltage - Rated
65V
Current Rating
10µA
Current - Test
800mA
Voltage - Test
28V
Power - Output
22W
Package / Case
NI-780S
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
22W
Power Gain (typ)@vds
18dB
Frequency (min)
2.11GHz
Frequency (max)
2.17GHz
Package Type
NI-780S
Pin Count
3
Input Capacitance (typ)@vds
160@28VpF
Output Capacitance (typ)@vds
296@28VpF
Reverse Capacitance (typ)
0.64@28VpF
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
32%
Mounting
Surface Mount
Mode Of Operation
1-Carrier W-CDMA/CDMA/TD-SCDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MRF7S21080HSR3
Manufacturer:
FREESCALE
Quantity:
1 400
RF Device Data
Freescale Semiconductor
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Revision
Refer to the following documents to aid your design process.
The following table summarizes revisions to this document.
0
Nov. 2007
Date
• Initial Release of Data Sheet
PRODUCT DOCUMENTATION
REVISION HISTORY
Description
MRF7S21080HR3 MRF7S21080HSR3
11