MRF7S21080HSR3 Freescale Semiconductor, MRF7S21080HSR3 Datasheet - Page 6

• Manufacturer Part Number: MRF7S21080HSR3
• Description: MOSFET RF N-CH 22W NI-780S
• Manufacturer: Freescale Semiconductor

Specifications of MRF7S21080HSR3

• Transistor Type: N-Channel
• Frequency: 2.11GHz
• Gain: 18dB
• Voltage - Rated: 65V
• Current Rating: 10µA
• Current - Test: 800mA
• Voltage - Test: 28V
• Power - Output: 22W
• Package / Case: NI-780S
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 22W
• Power Gain (typ)@vds: 18dB
• Frequency (min): 2.11GHz
• Frequency (max): 2.17GHz
• Package Type: NI-780S
• Pin Count: 3
• Input Capacitance (typ)@vds: 160@28VpF
• Output Capacitance (typ)@vds: 296@28VpF
• Reverse Capacitance (typ): 0.64@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 32%
• Mounting: Surface Mount
• Mode Of Operation: 1-Carrier W-CDMA/CDMA/TD-SCDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

MRF7S21080HR3 MRF7S21080HSR3
6
20
19
18
17
16
15
14
13
1
800 mA
600 mA
400 mA
1000 mA
Figure 5. Two - Tone Power Gain versus
V
Two−Tone Measurements, 10 MHz Tone Spacing
DD
P
out
= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
, OUTPUT POWER (WATTS) PEP
Output Power
I
DQ
10
Figure 4. Output Peak - to - Average Ratio Compression (PARC)
= 1200 mA
Figure 3. Output Peak - to - Average Ratio Compression (PARC)
18.8
18.6
18.4
18.2
17.8
17.6
17.4
17.2
18.2
17.8
17.6
17.4
17.2
16.8
16.6
16.4
19
18
17
18
17
2060
2060
Broadband Performance @ P
PARC
PARC
Broadband Performance @ P
G
G
η
V
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF)
ps
ps
D
DD
2080
2080
= 28 Vdc, P
V
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF)
η
DD
TYPICAL CHARACTERISTICS
D
2100
2100
= 28 Vdc, P
IRL
100
out
= 40 W (Avg.), I
f, FREQUENCY (MHz)
2120
f, FREQUENCY (MHz)
2120
out
200
IRL
= 22 W (Avg.), I
2140
2140
DQ
2160
2160
= 800 mA
out
out
−10
−20
−30
−40
−50
−60
DQ
= 40 Watts Avg.
= 800 mA
= 22 Watts Avg.
2180
2180
1
Figure 6. Third Order Intermodulation Distortion
V
Two−Tone Measurements, 10 MHz Tone Spacing
I
DD
DQ
600 mA
2200
2200
= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
= 400 mA
1200 mA
800 mA
P
2220
2220
out
versus Output Power
, OUTPUT POWER (WATTS) PEP
34
33
32
31
30
0
−0.5
−1
−1.5
−2
−2.5
45
44
43
42
41
−2
−2.5
−3
−3.5
−4
1000 mA
10
−4
−8
−12
−16
−20
−4
−8
−12
−16
−24
−20
Freescale Semiconductor
RF Device Data
100
200