PD57060TR-E STMicroelectronics, PD57060TR-E Datasheet - Page 3
![no-image](/images/manufacturer_photos/0/6/637/stmicroelectronics_sml.jpg)
PD57060TR-E
Manufacturer Part Number
PD57060TR-E
Description
IC TRANS RF PWR LDMOST PWRSO-10
Manufacturer
STMicroelectronics
Datasheet
1.PD57060S-E.pdf
(21 pages)
Specifications of PD57060TR-E
Transistor Type
LDMOS
Frequency
945MHz
Gain
14.3dB
Voltage - Rated
65V
Current Rating
7A
Current - Test
100mA
Voltage - Test
28V
Power - Output
60W
Package / Case
PowerSO-10 Exposed Bottom Pad
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
7A
Drain Source Voltage (max)
65V
Output Power (max)
60W(Min)
Power Gain (typ)@vds
14.3dB
Frequency (max)
1GHz
Package Type
PowerSO-10RF (Formed lead)
Pin Count
3
Forward Transconductance (typ)
2.5(Min)S
Input Capacitance (typ)@vds
83@28VpF
Output Capacitance (typ)@vds
58@28VpF
Reverse Capacitance (typ)
3@28VpF
Operating Temp Range
-65C to 165C
Drain Efficiency (typ)
54%
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
79000mW
Vswr (max)
5(Min)
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PD57060TR-E
Manufacturer:
ST
Quantity:
210
Part Number:
PD57060TR-E
Manufacturer:
ST
Quantity:
20 000
PD57060-E
1
1.1
1.2
Electrical data
Maximum ratings
Table 2.
Thermal data
Table 3.
V
Symbol
Symbol
(BR)DSS
P
R
T
V
DISS
T
STG
thJC
I
GS
D
J
Absolute maximum ratings (T
Thermal data
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation (@ Tc = 70°C)
Max. Operating Junction Temperature
Storage Temperature
Junction - case thermal resistance
Doc ID 11758 Rev 4
Parameter
Parameter
CASE
= 25°C)
-65 to +150
Value
Value
± 20
165
1.0
65
79
7
Electrical data
°C/W
Unit
Unit
°C
°C
W
V
V
A
3/21