PD57045-E STMicroelectronics, PD57045-E Datasheet - Page 8

• Manufacturer Part Number: PD57045-E
• Description: IC TRANS RF PWR LDMOST PWRSO-10
• Manufacturer: STMicroelectronics

Specifications of PD57045-E

• Transistor Type: LDMOS
• Frequency: 945MHz
• Gain: 14.5dB
• Voltage - Rated: 65V
• Current Rating: 5A
• Current - Test: 250mA
• Voltage - Test: 28V
• Power - Output: 45W
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 5A
• Drain Source Voltage (max): 65V
• Output Power (max): 45W(Min)
• Power Gain (typ)@vds: 14.5dB
• Frequency (max): 1GHz
• Package Type: PowerSO-10RF (Formed lead)
• Pin Count: 3
• Forward Transconductance (typ): 2.7S
• Input Capacitance (typ)@vds: 86@28VpF
• Output Capacitance (typ)@vds: 47@28VpF
• Reverse Capacitance (typ): 3.6@28VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 50(Min)%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 73000mW
• Vswr (max): 10(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

Typical performance
8/20
Figure 11. Output power vs bias curren
Figure 13. Output power vs drain voltage
80
70
60
50
40
30
20
10
60
50
40
30
20
0
16
f = 945 MHz
Vdd = 28 V
Idq = 250 mA
18
200
20
VDS, DRAIN-SOURCE VOLTAGE (V)
Idq, BIAS CURRENT (mA)
22
400
24
26
600
28
Pin = 1.5 W
Vdd = 28 V
f = 945 MHz
800
30
Pin = 1.5 W
Pin = 2 W
Pin = 1 W
Pin =3 W
32
Doc ID 12616 Rev 2
1000
34
Figure 12. Drain efficiency vs bias current
Figure 14. Output power vs gate bias voltage
50
40
30
20
10
0
70
60
50
40
30
0
0
0.5
200
1
VGS, GATE BIAS VOLTAGE (V)
Idq, BIAS CURRENT (mA)
1.5
400
PD57045-E, PD57045S-E
2
600
2.5
Pin = 1.5 W
Vdd = 28 V
f = 945 MHz
800
Pin = 1.5 W
Vdd = 28 V
f = 945 MHz
3
3.5
1000
4