PD57045-E STMicroelectronics, PD57045-E Datasheet - Page 7

IC TRANS RF PWR LDMOST PWRSO-10

PD57045-E

Manufacturer Part Number
PD57045-E
Description
IC TRANS RF PWR LDMOST PWRSO-10
Manufacturer
STMicroelectronics
Datasheet

Specifications of PD57045-E

Transistor Type
LDMOS
Frequency
945MHz
Gain
14.5dB
Voltage - Rated
65V
Current Rating
5A
Current - Test
250mA
Voltage - Test
28V
Power - Output
45W
Package / Case
PowerSO-10 Exposed Bottom Pad
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
5A
Drain Source Voltage (max)
65V
Output Power (max)
45W(Min)
Power Gain (typ)@vds
14.5dB
Frequency (max)
1GHz
Package Type
PowerSO-10RF (Formed lead)
Pin Count
3
Forward Transconductance (typ)
2.7S
Input Capacitance (typ)@vds
86@28VpF
Output Capacitance (typ)@vds
47@28VpF
Reverse Capacitance (typ)
3.6@28VpF
Operating Temp Range
-65C to 165C
Drain Efficiency (typ)
50(Min)%
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
73000mW
Vswr (max)
10(Min)
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PD57045-E
Manufacturer:
ST
Quantity:
20 000
PD57045-E, PD57045S-E
4.1
Figure 7.
Figure 9.
17
16
15
14
13
12
10
11
60
50
40
30
20
10
0
0.1
0
0.5
PD57045S-E
Gp
Output power vs input power
Power gain vs output power
1
Idq = 250 mA
Pin, INPUT POWER (W)
Idq = 150 mA
Pout, OUTPUT POWER (W)
Idq = 450 mA
Idq = 75 mA
1
1.5
2
Pout
2.5
10
V
I
f = 945 MHz
DQ
DD
= 250 mA
Vdd = 28 V
f = 945 Mhz
= 28 V
3
Doc ID 12616 Rev 2
3.5
16
15
14
13
12
11
10
100
Figure 8.
Figure 10. Drain efficiency vs output power
-10
-20
-30
-40
60
50
40
30
20
10
0
0
0
0
f = 945 MHz
Vdd = 28 V
Idq = 250 mA
Input return loss vs output power
10
10
Pout, OUTPUT POWER (W)
Pout, OUTPUT POWER (W)
20
20
30
30
Typical performance
40
40
f = 945 MHz
Vdd = 28 V
Idq = 250 mA
50
50
60
60
7/20

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