PD57002-E STMicroelectronics, PD57002-E Datasheet - Page 20

• Manufacturer Part Number: PD57002-E
• Description: TRANS RF N-CH FET LDMOST PWRSO10
• Manufacturer: STMicroelectronics

Specifications of PD57002-E

• Transistor Type: LDMOS
• Frequency: 960MHz
• Gain: 15dB
• Voltage - Rated: 65V
• Current Rating: 250mA
• Current - Test: 10mA
• Voltage - Test: 28V
• Power - Output: 2W
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 0.25A
• Drain Source Voltage (max): 65V
• Output Power (max): 2W(Min)
• Power Gain (typ)@vds: 15(Min)dB
• Frequency (max): 1GHz
• Package Type: PowerSO-10RF (Formed lead)
• Pin Count: 4
• Input Capacitance (typ)@vds: 7.1@28VpF
• Output Capacitance (typ)@vds: 5.8@28VpF
• Reverse Capacitance (typ): 0.1@28VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 45(Min)%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 4750mW
• Vswr (max): 10(Min)
• Screening Level: Military
• Supply Voltage: 36 V
• Peak Power: 200 W typical
• Input Power: 23 dBm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-5304-5

Package mechanical data
Note:
20/23
Table 17.
Resin protrusions not included (max value: 0.15 mm per side)
Figure 16. Package dimensions
Dim
A1
A2
A3
A4
D1
E1
E2
E3
R1
R2
T1
T2
G
D
E
a
b
F
c
PowerSO-10RF straight lead mechanical data
15.15
1.62
0.15
0.23
Min
3.4
1.2
5.4
9.4
7.4
9.3
7.3
5.9
10 deg
6 deg
Doc ID 12332 Rev 3
mm.
1.67
5.53
0.27
15.4
Typ
3.5
1.3
0.2
0.2
9.5
7.5
9.4
7.4
6.1
0.5
1.2
0.8
15.65
Max
1.72
0.25
5.65
0.32
0.25
3.6
1.4
9.6
7.6
9.5
7.5
6.3
0.134
0.212
0.370
0.290
0.595
0.286
0.064
0.046
0.005
0.008
0.365
0.231
Min
CRITICAL DIMENSIONS:
- Overall width (L)
10 deg
0.065
0.137
0.007
0.007
0.217
0.374
0.295
0.606
0.292
0.019
0.047
0.031
6 deg
Inch
0.05
0.01
0.37
0.24
Typ
PD57002-E
0.068
0.142
0.054
0.009
0.221
0.012
0.377
0.298
0.615
0.375
0.294
0.247
Max
0.01