PD57002-E STMicroelectronics, PD57002-E Datasheet

TRANS RF N-CH FET LDMOST PWRSO10

PD57002-E

Manufacturer Part Number
PD57002-E
Description
TRANS RF N-CH FET LDMOST PWRSO10
Manufacturer
STMicroelectronics
Datasheet

Specifications of PD57002-E

Transistor Type
LDMOS
Frequency
960MHz
Gain
15dB
Voltage - Rated
65V
Current Rating
250mA
Current - Test
10mA
Voltage - Test
28V
Power - Output
2W
Package / Case
PowerSO-10 Exposed Bottom Pad
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
0.25A
Drain Source Voltage (max)
65V
Output Power (max)
2W(Min)
Power Gain (typ)@vds
15(Min)dB
Frequency (max)
1GHz
Package Type
PowerSO-10RF (Formed lead)
Pin Count
4
Input Capacitance (typ)@vds
7.1@28VpF
Output Capacitance (typ)@vds
5.8@28VpF
Reverse Capacitance (typ)
0.1@28VpF
Operating Temp Range
-65C to 165C
Drain Efficiency (typ)
45(Min)%
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
4750mW
Vswr (max)
10(Min)
Screening Level
Military
Supply Voltage
36 V
Peak Power
200 W typical
Input Power
23 dBm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
497-5304-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PD57002-E
Manufacturer:
ST
Quantity:
20 000
Features
Description
The device is a common source N-channel,
enhancement-mode lateral field-effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to 1
GHz. The device is designed for high gain and
broadband performance operating in common
source mode at 28 V. It is ideal for digital cellular
BTS applications requiring high linearity. The
PowerSO-10 plastic package, designed to offer
high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performance and ease of assembly. Mounting
recommendations are available in www.st.com/rf/
(look for application note AN1294).
Table 1.
December 2010
Excellent thermal stability
Common source configuration
P
New RF plastic package
OUT
= 2 W with 15dB gain @ 960 MHz / 28 V
PD57002S-E
Order code
PD57002-E
Device summary
N-channel enhancement-mode, lateral MOSFETs
RF POWER transistor, LdmoST plastic family
PowerSO-10RF (straight lead)
PowerSO-10RF (formed lead)
Doc ID 12332 Rev 3
Package
Figure 1.
Gate
Pin connection
PowerSO-10RF
PowerSO-10RF
(straight lead)
(formed lead)
PD57002-E
Packing
Tube
Tube
Source
Drain
www.st.com
1/23
23

Related parts for PD57002-E

PD57002-E Summary of contents

Page 1

... Device summary Order code PD57002-E PD57002S-E December 2010 RF POWER transistor, LdmoST plastic family Figure 1. Gate Package PowerSO-10RF (formed lead) PowerSO-10RF (straight lead) Doc ID 12332 Rev 3 PD57002-E PowerSO-10RF (formed lead) PowerSO-10RF (straight lead) Pin connection Source Drain Packing Tube Tube www.st.com 1/23 ...

Page 2

... Contents 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.3 Moisture sensitivity level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 Common source s-parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 2/23 Doc ID 12332 Rev 3 PD57002-E ...

Page 3

... PD57002-E 1 Electrical data 1.1 Maximum ratings Table 2. Absolute maximum ratings (T Symbol V (BR)DSS DISS STG 1.2 Thermal data Table 3. Thermal data Symbol R thJC CASE Parameter Drain-source voltage Gate-source voltage Drain current Power dissipation (@ T = 70°C) C Max. operating junction temperature Storage temperature Parameter ...

Page 4

... MHz MHz DS Test conditions 960 MHz mA 960 MHz DQ OUT mA 960 MHz DQ OUT mA 2W 960 MHz DQ OUT Test methodology J-STD-020B Doc ID 12332 Rev 3 PD57002-E Min Typ Max Unit 1 µA 1 µA 2.0 5.0 V 0.7 0 mho 7.1 pF 5.8 pF 0.1 pF Min Typ Max Unit 10:1 ...

Page 5

... PD57002-E 3 Impedance Figure 2. Current conventions Table 7. Impedance data Freq. (MHz) 925 945 960 Z (Ω) IN 1.894 - j 13.43 2.440 - j 12.53 2.760 - j 12.13 Doc ID 12332 Rev 3 Impedance Z (Ω) DL 6.445 + j 23.60 7.245 + j 25.09 7.715 + j 25.69 5/23 ...

Page 6

... Vgs (Normalized) 1.05 1.025 1 0.975 0.95 0.925 0.9 -50 - (°C) 6/23 Figure 4. Id (A) 0.25 0.2 Ciss 0.15 Coss 0.1 0.05 Crss 200 150 100 Vds = 10V 75 100 125 Doc ID 12332 Rev 3 PD57002-E Drain current vs gate source voltage 2.5 3 3.5 4 4.5 5 5.5 Vgs (V) 6 ...

Page 7

... PD57002-E Figure 6. Output power vs input power Pout (W) 2.5 2 1 0.01 0.02 0.03 0.04 Pin (W) Figure 8. Power gain vs output power Pg (dB) 18 925 MHz 17 945 MHz 16 960 MHz 0.25 0.5 0.75 1 1.25 Pout (W) Figure 7. IRL (dB) 0 945 MHz -5 925 MHz -10 960 MHz ...

Page 8

... Figure 13. Efficiency vs drain current Eff (%) 60 50 960 MHz 945 MHz Pin = 17.4dBm Vdd = 28V 10 125 150 175 0 Doc ID 12332 Rev 3 PD57002-E 945 MHz 960 MHz 925 MHz Pin = 17.4dBm Idq = 15mA 12.5 15 17.5 20 22.5 25 27.5 Vdd (V) 945 MHz 925 MHz 960 MHz Pin = 17 ...

Page 9

... PD57002-E Figure 14. Output power vs gate-source voltage Pout (W) 2.5 2 1.5 945 MHz 1 925 MHz 960 MHz 0 0.5 1 1.5 2 2.5 Vgs (V) Pin = 17.4dBm Vdd = 28V 3 3.5 4 4.5 Doc ID 12332 Rev 3 Typical performance 9/23 ...

Page 10

... Common source s-parameter 5 Common source s-parameter Table 8. S-parameter for PD57002-E (V Freq < Φ (MHz) 50 0.980 -16 100 0.972 -31 150 0.966 -46 200 0.951 -59 250 0.944 -70 300 0.936 -80 350 0.925 -90 400 0.926 -98 450 0.924 -105 500 0.919 -112 550 0.921 -117 600 0.915 -122 650 ...

Page 11

... PD57002-E Table 9. S-parameter PD57002-E (V Freq < Φ (MHz) 50 0.998 -17 100 0.989 -32 150 0.975 -47 200 0.965 -61 250 0.954 -72 300 0.943 -82 350 0.939 -92 400 0.934 -100 450 0.931 -107 500 0.930 -113 550 0.927 -119 600 0.925 -124 650 0.927 -128 700 0.926 -133 750 0 ...

Page 12

... Common source s-parameter Table 10. S-parameter for PD57002-E (V Freq < Φ (MHz) 50 0.969 -17 100 0.959 -33 150 0.949 -48 200 0.925 -61 250 0.915 -73 300 0.906 -83 350 0.890 -92 400 0.892 -100 450 0.888 -106 500 0.881 -113 550 0.888 -119 600 0.882 -123 650 0.888 -128 700 0 ...

Page 13

... PD57002-E Table 11. S-parameter for PD57002-E (V Freq < Φ (MHz) 50 0.986 -18 100 0.972 -34 150 0.955 -50 200 0.934 -63 250 0.921 -75 300 0.909 -85 350 0.897 -94 400 0.895 -102 450 0.892 -109 500 0.889 -115 550 0.889 -121 600 0.886 -125 650 0.891 -130 700 0.892 ...

Page 14

... Doc ID 12332 Rev 3 PD57002-E < Φ < Φ 0.929 -12 64 0.916 -24 53 0.911 -36 42 0.889 -46 32 0.883 -56 24 0.864 -64 17 0.860 -71 8 0.866 ...

Page 15

... PD57002-E Table 13. S-parameter for PD57002S-E (V Freq < Φ (MHz) 50 0.997 -17 100 0.988 -32 150 0.972 -47 200 0.962 -60 250 0.950 -72 300 0.942 -82 350 0.934 -91 400 0.932 -99 450 0.928 -106 500 0.924 -112 550 0.923 -117 600 0.922 -122 650 0.922 -126 700 0.923 -130 750 0 ...

Page 16

... Doc ID 12332 Rev 3 PD57002-E < Φ < Φ 0.966 -14 63 0.946 -28 50 0.938 -41 39 0.901 -53 29 0.891 -63 20 0.863 -72 13 0.854 -78 5 0.859 ...

Page 17

... PD57002-E Table 15. S-parameter for PD57002S-E (V Freq < Φ (MHz) 50 0.990 -18 100 0.976 -35 150 0.952 -50 200 0.933 -64 250 0.917 -75 300 0.905 -85 350 0.895 -94 400 0.891 -102 450 0.886 -108 500 0.884 -114 550 0.884 -119 600 0.883 -124 650 0.886 -128 700 0.889 ...

Page 18

... Package mechanical data 6 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ® ECOPACK trademark. 18/23 Doc ID 12332 Rev 3 PD57002-E ® ...

Page 19

... PD57002-E Table 16. PowerSO-10RF formed lead (Gull Wing) mechanical data Dim Note: Resin protrusions not included (max value: 0.15 mm per side) Figure 15. Package dimensions mm Min Typ Max 0 0.05 0.1 3.4 3.5 3.6 1.2 1.3 1.4 0.15 0.2 0.25 0.2 5.4 5.53 5.65 ...

Page 20

... Doc ID 12332 Rev 3 PD57002-E Inch Min Typ Max 0.064 0.065 0.068 0.134 0.137 0.142 0.046 0.05 0.054 0.005 0.007 0.009 0.007 0.212 0.217 ...

Page 21

... PD57002-E Figure 17. Tube information Doc ID 12332 Rev 3 Package mechanical data 21/23 ...

Page 22

... Revision history 7 Revision history Table 18. Document revision history Date 11-May-2006 28-May-2010 24-Dec-2010 22/23 Revision 1 Initial release. 2 Added: Table 6: Moisture sensitivity 3 Content reworked to improve readability Doc ID 12332 Rev 3 PD57002-E Changes level. ...

Page 23

... PD57002-E Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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