BLA6H1011-600,112 NXP Semiconductors, BLA6H1011-600,112 Datasheet - Page 5

• Manufacturer Part Number: BLA6H1011-600,112
• Description: TRANS AVIONICS PWR LDMOS SOT539A
• Manufacturer: NXP Semiconductors

Specifications of BLA6H1011-600,112

• Transistor Type: LDMOS
• Frequency: 1.03GHz ~ 1.09GHz
• Gain: 19dB
• Current - Test: 100mA
• Voltage - Test: 50V
• Power - Output: 600W
• Package / Case: SOT539A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063449112

NXP Semiconductors
BLA6H1011-600_1
Product data sheet
Fig 4.
Fig 6.
RL
(dB)
(dB)
G
(1) f = 1030 MHz
(2) f = 1090 MHz
p
in
20
16
12
20
16
12
8
4
0
1025
8
4
0
T
t
Input return loss as a function of frequency;
typical values
0
T
δ = 2 %.
Power gain as a function of load power;
typical values
p
h
h
= 50 μs; δ = 2 %.
= 25 °C; P
= 65 °C; V
1035
200
1045
L
DS
= 600 W; V
= 48 V; I
1055
400
1065
Dq
DS
= 100 mA; t
= 48 V; I
1075
600
All information provided in this document is subject to legal disclaimers.
f (MHz)
1085
P
(2)
Dq
001aal834
001aal836
L
p
(W)
= 100 mA;
= 50 μs;
(1)
1095
800
Rev. 01 — 22 April 2010
Fig 5.
Fig 7.
(W)
(%)
P
η
(1) f = 1030 MHz
(2) f = 1090 MHz
(1) f = 1030 MHz
(2) f = 1090 MHz
800
600
400
200
D
L
60
40
20
0
0
0
0
T
δ = 2 %.
Load power as a function of input power;
typical values
T
δ = 2 %.
Drain efficiency as a function of load power;
typical values
h
h
= 25 °C; V
= 65 °C; V
200
LDMOS avionics power transistor
DS
DS
6
BLA6H1011-600
= 48 V; I
= 48 V; I
400
Dq
Dq
= 100 mA; t
= 100 mA; t
(1)
12
600
© NXP B.V. 2010. All rights reserved.
P
i
(2)
P
(W)
001aal835
001aal837
L
p
p
(W)
(2)
= 50 μs;
= 50 μs;
(1)
800
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