BLA6H1011-600 NXP Semiconductors, BLA6H1011-600 Datasheet

LDOMS,RF,600W,1030M-1090MHZ,50V

BLA6H1011-600

Manufacturer Part Number
BLA6H1011-600
Description
LDOMS,RF,600W,1030M-1090MHZ,50V
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLA6H1011-600

Drain Source Voltage Vds
100V
Continuous Drain Current Id
72A
Operating Frequency Range
960MHz To 1.215GHz / 1.2GHz To 1.4GHz
Rf Transistor Case
SOT-539A
No. Of Pi
RoHS Compliant
Transistor Type
RF MOSFET

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1. Product profile
CAUTION
1.1 General description
1.2 Features and benefits
600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the
1030 MHz to 1090 MHz range.
Table 1.
Typical RF performance at T
test circuit.
Mode of operation
pulsed RF
BLA6H1011-600
LDMOS avionics power transistor
Rev. 01 — 22 April 2010
Typical pulsed RF performance at a frequency of 1030 MHz to 1090 MHz, a supply
voltage of 48 V, an I
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1030 MHz to 1090 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Output power = 600 W
Power gain = 17 dB
Efficiency = 52 %
Test information
Dq
case
of 100 mA, a t
f
(MHz)
1030 to 1090
= 25
°
C; t
p
= 50
p
of 50 μs with δ of 2 %:
μ
s;
δ
V
(V)
48
DS
= 2 %; I
P
(W)
600
Dq
L
= 100 mA; in a class-AB production
G
(dB)
17
p
Product data sheet
52
η
(%)
D
t
(ns)
11
r
t
(ns)
5
f

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BLA6H1011-600 Summary of contents

Page 1

... BLA6H1011-600 LDMOS avionics power transistor Rev. 01 — 22 April 2010 1. Product profile 1.1 General description 600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the 1030 MHz to 1090 MHz range. Table 1. Typical RF performance at T test circuit. Mode of operation pulsed RF CAUTION This device is sensitive to ElectroStatic Discharge (ESD) ...

Page 2

... W LDMOS pulsed power transistor intended for TCAS and IFF applications in the 1030 MHz to 1090 MHz frequency range 2. Pinning information Table 2. Pin [1] Connected to flange. 3. Ordering information Table 3. Type number BLA6H1011-600 - 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg ...

Page 3

... P L(1dB) η droop(pulse 6.1 Ruggedness in class-AB operation The BLA6H1011-600 is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 100 mA BLA6H1011-600_1 Product data sheet DC characteristics C; per section unless otherwise specified. drain-source breakdown voltage V gate-source threshold voltage drain leakage current ...

Page 4

... Z Definition of transistor impedance 001aal832 (1) (2) (%) 600 900 P ( μs; = 100 mA Fig 3. All information provided in this document is subject to legal disclaimers. Rev. 01 — 22 April 2010 BLA6H1011-600 LDMOS avionics power transistor Z L Ω 0.977 + j0.049 1.033 + j0.221 1.086 + j0.379 drain 001aaf059 60 η ...

Page 5

... 100 mA Fig 5. 001aal836 (1) (2) 600 800 P ( μs; = 100 mA Fig 7. All information provided in this document is subject to legal disclaimers. Rev. 01 — 22 April 2010 BLA6H1011-600 LDMOS avionics power transistor 800 ( (W) 600 400 200 ° 100 mA δ ( 1030 MHz ( 1090 MHz Load power as a function of input power ...

Page 6

... Load power as a function of input power; typical values 001aal839 η (%) (1) (2) (3) 600 800 P (W) L (1) T (2) T Fig 10. Drain efficiency as a function of load power; All information provided in this document is subject to legal disclaimers. Rev. 01 — 22 April 2010 BLA6H1011-600 LDMOS avionics power transistor 001aal838 ( μs; δ ...

Page 7

... SMD resistor metal film resistor resistor All information provided in this document is subject to legal disclaimers. Rev. 01 — 22 April 2010 BLA6H1011-600 LDMOS avionics power transistor 001aal841 (1) (2) ( ...

Page 8

... Fig 12. Component layout for class-AB production test circuit BLA6H1011-600_1 Product data sheet 6.15 F/m; thickness = 0.64 mm; thickness copper plating = 35 μm. r All information provided in this document is subject to legal disclaimers. Rev. 01 — 22 April 2010 BLA6H1011-600 LDMOS avionics power transistor C11 C10 C7 001aal842 © NXP B.V. 2010. All rights reserved. ...

Page 9

... REFERENCES JEDEC EIAJ All information provided in this document is subject to legal disclaimers. Rev. 01 — 22 April 2010 BLA6H1011-600 LDMOS avionics power transistor 3.48 3 ...

Page 10

... Traffic Collision Avoidance System Voltage Standing-Wave Ratio Release date Data sheet status 20100422 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 22 April 2010 BLA6H1011-600 LDMOS avionics power transistor Change notice Supersedes - - © NXP B.V. 2010. All rights reserved ...

Page 11

... NXP Semiconductors’ warranty of the All information provided in this document is subject to legal disclaimers. Rev. 01 — 22 April 2010 BLA6H1011-600 LDMOS avionics power transistor © NXP B.V. 2010. All rights reserved ...

Page 12

... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 01 — 22 April 2010 BLA6H1011-600 LDMOS avionics power transistor © NXP B.V. 2010. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLA6H1011-600_1 All rights reserved. Date of release: 22 April 2010 ...

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