BLS6G3135-120,112 NXP Semiconductors, BLS6G3135-120,112 Datasheet - Page 6

• Manufacturer Part Number: BLS6G3135-120,112
• Description: TRANS LDMOS 3.5GHZ SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLS6G3135-120,112

• Package / Case: SOT502A
• Transistor Type: LDMOS
• Frequency: 3.1GHz ~ 3.5GHz
• Gain: 11dB
• Voltage - Rated: 60V
• Current Rating: 7.2A
• Current - Test: 100mA
• Voltage - Test: 32V
• Power - Output: 130W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.16 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 7.2 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060063112; BLS6G3135-120; BLS6G3135-120

NXP Semiconductors
BLS6G3135-120_6G3135S-120_2
Product data sheet
Fig 8. Drain efficiency as a function of load power;
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
(%)
D
50
40
30
20
10
0
V
typical values
0
DS
= 32 V; I
40
Dq
= 100 mA; t
80
p
= 100 s; = 20 %.
120
BLS6G3135-120; BLS6G3135S-120
(1)
(3)
001aag829
P
L
(W)
(2)
160
Rev. 02 — 29 May 2008
Fig 9. Load power as a function of input power;
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
(W)
P
160
L
120
80
40
0
V
typical values
0
DS
= 32 V; I
LDMOS S-Band radar power transistor
5
Dq
= 100 mA; t
10
(2)
p
= 100 s; = 20 %.
15
(1)
© NXP B.V. 2008. All rights reserved.
(3)
001aag830
P
i
(W)
20
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