BLS6G3135-120,112 NXP Semiconductors, BLS6G3135-120,112 Datasheet - Page 5

• Manufacturer Part Number: BLS6G3135-120,112
• Description: TRANS LDMOS 3.5GHZ SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLS6G3135-120,112

• Package / Case: SOT502A
• Transistor Type: LDMOS
• Frequency: 3.1GHz ~ 3.5GHz
• Gain: 11dB
• Voltage - Rated: 60V
• Current Rating: 7.2A
• Current - Test: 100mA
• Voltage - Test: 32V
• Power - Output: 130W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.16 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 7.2 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060063112; BLS6G3135-120; BLS6G3135-120

NXP Semiconductors
BLS6G3135-120_6G3135S-120_2
Product data sheet
Fig 4. Drain efficiency as a function of load power;
Fig 6. Power gain and drain efficiency as functions of
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
(dB)
(%)
G
D
p
50
40
30
20
10
13
11
0
9
7
5
3
V
typical values
V
P
frequency; typical values
0
3
DS
DS
L
= 120 W.
= 32 V; I
= 32 V; I
40
Dq
Dq
3.2
= 100 mA; t
= 100 mA; t
80
p
p
= 300 s; = 10 %.
= 100 s; = 20 %;
3.4
120
G
D
f (GHz)
BLS6G3135-120; BLS6G3135S-120
p
(1)
(3)
001aag825
P
001aag827
L
(W)
(2)
160
3.6
Rev. 02 — 29 May 2008
50
40
30
20
10
0
(%)
D
Fig 5. Load power as a function of input power;
Fig 7. Power gain as a function of load power; typical
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
(dB)
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
(W)
P
G
160
L
120
p
80
40
14
10
0
6
2
V
typical values
V
values
0
0
DS
DS
= 32 V; I
= 32 V; I
LDMOS S-Band radar power transistor
40
5
Dq
Dq
= 100 mA; t
= 100 mA; t
10
80
p
p
= 300 s; = 10 %.
= 100 s; = 20 %.
(2)
(1)
(1)
120
15
© NXP B.V. 2008. All rights reserved.
(2)
(3)
P
001aag826
P
001aag828
L
i
(3)
(W)
(W)
160
20
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