BLF278/01,112 NXP Semiconductors, BLF278/01,112 Datasheet - Page 19

• Manufacturer Part Number: BLF278/01,112
• Description: TRANSISTOR VHF PWR DMOS SOT262A1
• Manufacturer: NXP Semiconductors

Specifications of BLF278/01,112

• Transistor Type: 2 N-Channel (Dual)
• Frequency: 108MHz
• Gain: 22dB
• Voltage - Rated: 125V
• Current Rating: 18A
• Current - Test: 100mA
• Voltage - Test: 50V
• Power - Output: 300W
• Package / Case: SOT-262A1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934031850112

Philips Semiconductors
2003 Sep 19
handbook, halfpage
handbook, halfpage
VHF push-pull power MOS transistor
Class-AB operation; V
R
Fig.23 Input impedance as a function of frequency
GS
( )
z i
= 2.8
–2
2
1
0
1
150
Fig.25 Definition of MOS impedance.
(series components); typical values per
section.
(per section); P
Z i
DS
= 50 V; I
L
= 250 W.
x i
r i
200
DQ
Z L
= 2
0.5 A;
MBA379
f (MHz)
MGE611
250
19
handbook, halfpage
handbook, halfpage
Class-AB operation; V
R
Fig.24 Load impedance as a function of frequency
Class-AB operation; V
R
Fig.26 Power gain as a function of frequency;
GS
GS
(dB)
G p
( )
Z L
= 2.8
= 2.8
20
10
0
3
2
1
0
150
150
(series components); typical values per
section.
typical values per section.
(per section); P
(per section); P
DS
DS
= 50 V; I
= 50 V; I
L
L
= 250 W.
= 250 W.
R L
X L
200
200
DQ
DQ
= 2
= 2
0.5 A;
0.5 A;
f (MHz)
f (MHz)
Product Specification
BLF278
MGE625
MGE624
250
250