BLF278/01,112 NXP Semiconductors, BLF278/01,112 Datasheet - Page 14

• Manufacturer Part Number: BLF278/01,112
• Description: TRANSISTOR VHF PWR DMOS SOT262A1
• Manufacturer: NXP Semiconductors

Specifications of BLF278/01,112

• Transistor Type: 2 N-Channel (Dual)
• Frequency: 108MHz
• Gain: 22dB
• Voltage - Rated: 125V
• Current Rating: 18A
• Current - Test: 100mA
• Voltage - Test: 50V
• Power - Output: 300W
• Package / Case: SOT-262A1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934031850112

Philips Semiconductors
2003 Sep 19
handbook, halfpage
handbook, halfpage
VHF push-pull power MOS transistor
Class-AB operation; V
Z
(1) T
(2) T
Fig.18 Power gain as a function of load power;
Class-AB operation; V
Z
(1) T
(2) T
Fig.20 Load power as a function of input power;
L
(W)
L
(dB)
P L
G p
= 0.74 + j2
= 0.74 + j2
400
300
200
100
20
10
h
h
h
h
0
0
= 25 C.
= 70 C.
= 25 C.
= 70 C.
0
0
typical values.
typical values.
(per section); R
(per section); R
DS
DS
100
5
= 50 V; I
= 50 V; I
(1)
(2)
(1)
(2)
GS
GS
DQ
DQ
= 2.8
= 2.8
= 2
= 2
200
10
0.5 A; f = 225 MHz;
0.5 A; f = 225 MHz;
(per section).
(per section).
P L (W)
P i (W)
MGE613
MGE614
300
15
14
handbook, halfpage
Class-AB operation; V
Z
(1) T
(2) T
Fig.19 Efficiency as a function of load power;
L
(%)
= 0.74 + j2
D
60
40
20
h
h
0
= 25 C.
= 70 C.
0
typical values.
(per section); R
DS
100
= 50 V; I
(1)
GS
DQ
= 2.8
(2)
= 2
200
0.5 A; f = 225 MHz;
(per section).
Product Specification
P L (W)
BLF278
MGE612
300