BLF645,112 NXP Semiconductors, BLF645,112 Datasheet - Page 2

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BLF645,112

Manufacturer Part Number
BLF645,112
Description
TRANSISTOR PWR LDMOS SOT540A
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF645,112

Transistor Type
LDMOS
Frequency
1.3GHz
Gain
18dB
Voltage - Rated
65V
Current Rating
32A
Current - Test
900mA
Voltage - Test
32V
Power - Output
100W
Package / Case
SOT540A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934061964112

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLF645,112
Manufacturer:
EMCT
Quantity:
1 400
NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
5. Thermal characteristics
BLF645_1
Product data sheet
1.3 Applications
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
[1]
Pin
1
2
3
4
5
Type number
BLF645
Symbol
V
V
I
T
T
Symbol Parameter
R
D
stg
j
DS
GS
th(j-c)
Communication transmitter applications in the HF to 1400 MHz frequency range
Industrial applications in the HF to 1400 MHz frequency range
Connected to flange.
R
th(j-c)
is measured under RF conditions.
thermal resistance from junction to case
Pinning
Ordering information
Limiting values
Thermal characteristics
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
drain 1
drain 2
gate 1
gate2
source
Description
Package
Name
-
Rev. 01 — 27 January 2010
Description
flanged balanced LDMOST ceramic package; 2
mounting holes; 4 leads
Conditions
[1]
Conditions
T
Simplified outline
case
Broadband power LDMOS transistor
= 80 °C; P
1
3
2
4
-
-
Min
-
−0.5
−65
L
= 100 W
5
Graphic symbol
© NXP B.V. 2010. All rights reserved.
Max
65
+11
32
+150
200
BLF645
3
4
[1]
Typ
0.67 K/W
Version
SOT540A
1
2
sym117
A
Unit
V
V
°C
°C
2 of 13
5
Unit

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