BLF645,112 NXP Semiconductors, BLF645,112 Datasheet
BLF645,112
Specifications of BLF645,112
Available stocks
Related parts for BLF645,112
BLF645,112 Summary of contents
Page 1
BLF645 Broadband power LDMOS transistor Rev. 01 — 27 January 2010 1. Product profile 1.1 General description A 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF ...
Page 2
... NXP Semiconductors 1.3 Applications Communication transmitter applications in the HF to 1400 MHz frequency range Industrial applications in the HF to 1400 MHz frequency range 2. Pinning information Table 2. Pin [1] Connected to flange. 3. Ordering information Table 3. Type number BLF645 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). ...
Page 3
... NXP Semiconductors 6. Characteristics Table 6. ° Symbol Parameter V (BR)DSS V GS(th) V GSq I DSS I DSX I GSS DS(on) C iss C oss Application information Table Mode of operation CW, class-AB 7.1 Ruggedness in class-AB operation The BLF645 is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions: V power ...
Page 4
... NXP Semiconductors 8. Test information 8.1 RF performance The following figures are measured in a class-AB production test circuit. 8.1.1 1-Tone (dB η 900 mA (for total device 1300 MHz. Fig 1. Power gain and drain efficiency as function of load power; typical values BLF645_1 Product data sheet 001aal361 ...
Page 5
... NXP Semiconductors (1) P (2) P Fig 3. BLF645_1 Product data sheet (dBm 900 mA (for total device 1300 MHz 50.5 dBm (112 W). L(1dB) = 51.5 dBm (141 W). L(3dB) Load power as function of input power; typical values Rev. 01 — 27 January 2010 Broadband power LDMOS transistor 001aal363 ideal P ...
Page 6
... NXP Semiconductors 8.1.2 2-Tone (dB η 900 mA (for total device 1300 MHz; carrier spacing = 100 kHz. Fig 4. Power gain and drain efficiency as function of peak envelope load power; typical values BLF645_1 Product data sheet 001aal364 60 0 IMD3 η D (dBc) (%) −10 50 −20 40 −30 30 −40 20 − ...
Page 7
... NXP Semiconductors 8.2 Reliability Years (1) T (2) T (3) T (4) T (5) T (6) T (7) T (8) T (9) T (10) T (11) T Fig 6. BLF645_1 Product data sheet (7) 10 (8) (9) (10) (11 TTF (0.1 % failure fraction). = 100 ° 110 ° 120 ° 130 ° 140 ° 150 ° 160 °C. ...
Page 8
... NXP Semiconductors 8.3 Test circuit Ω See Table 8 for a list of components. Fig 7. Class-AB common-source production test circuit BLF645 INPUT REVZ C5 NXP See Table 8 for a list of components. Fig 8. Component layout for class-AB production test circuit BLF645_1 Product data sheet C10 C10 C8 Rev. 01 — 27 January 2010 ...
Page 9
... NXP Semiconductors Table 8. List of components For test circuit, see Figure 7 and Figure Component Description C1 multilayer ceramic chip capacitor C6, C7, C11, C12, multilayer ceramic chip capacitor C17 C2, C3 multilayer ceramic chip capacitor C4, C5, C13, C14 multilayer ceramic chip capacitor C8 multilayer ceramic chip capacitor ...
Page 10
... NXP Semiconductors 9. Package outline Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) c UNIT 8.51 5.77 0.15 22.05 mm 8.26 5.00 0.10 21.64 0.335 0.227 0.006 0.868 inches 0.197 0.325 0.852 0.004 OUTLINE ...
Page 11
... NXP Semiconductors 10. Abbreviations Table 9. Acronym CW DC D-MOS ESD HF LDMOS LDMOST RF SMD VSWR 11. Revision history Table 10. Revision history Document ID Release date BLF645_1 20100127 BLF645_1 Product data sheet Abbreviations Description Continuous Waveform Direct Current Diffusion Metal-Oxide Semiconductor ElectroStatic Discharge High Frequency Laterally Diffused Metal Oxide Semiconductor ...
Page 12
... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
Page 13
... NXP Semiconductors 14. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 2 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 Application information 7.1 Ruggedness in class-AB operation . . . . . . . . . 3 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 4 8.1 RF performance . . . . . . . . . . . . . . . . . . . . . . . . 4 8.1.1 1-Tone 8.1.2 2-Tone ...