BLF6G38LS-100,112 NXP Semiconductors, BLF6G38LS-100,112 Datasheet - Page 4

• Manufacturer Part Number: BLF6G38LS-100,112
• Description: IC WIMAX 3.8GHZ 2-LDMOST
• Manufacturer: NXP Semiconductors

Specifications of BLF6G38LS-100,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 3.4GHz
• Gain: 13dB
• Voltage - Rated: 65V
• Current Rating: 34A
• Current - Test: 1.05A
• Voltage - Test: 28V
• Power - Output: 18.5W
• Minimum Operating Temperature: - 55 C
• Mounting Style: Screw
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.18 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 10.9 A
• Power Dissipation: 57.7 W
• Maximum Operating Temperature: + 175 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 130W(Typ)
• Power Gain (typ)@vds: 13@28VdB
• Frequency (min): 3.4GHz
• Frequency (max): 3.6GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 12S
• Drain Source Resistance (max): 150@6.15Vmohm
• Reverse Capacitance (typ): 2.6@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 21.5%
• Mounting: Surface Mount
• Mode Of Operation: 1-Carrier N-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061301112; BLF6G38LS-100; BLF6G38LS-100

NXP Semiconductors
7. Application information
BLF6G38-10_BLF6G38-10G_1
Product data sheet
7.2.1 WiMAX signal description
7.1 Ruggedness in class-AB operation
7.2 NXP WiMAX signal
Table 7.
Mode of operation: Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh
codes 8 - 13). PAR 9.7 dB at 0.01 % probability on CCDF; Channel Bandwidth is 1.23 MHz;
f
T
[1]
The BLF6G38-10 and BLF6G38-10G are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
frame duration = 5 ms; bandwidth = 10 MHz; sequency = 1 frame;
frequency band = WCS; sampling rate = 11.2 MHz; n = 8 / 7; G = T
FFT = 1024; zone type = PUSC; = 97.7 %; number of symbols = 46;
number of subchannels = 30; PAR = 9.5 dB.
Preamble: 1 symbol
Table 8.
Symbol
P
G
RL
ACPR
ACPR
Frame contents
Zone 0
Zone 0
Zone 0
1
case
DS
D
L(AV)
= 3400 MHz; f
p
in
Measured within 30 kHz bandwidth.
= 28 V; I
= 25 C; unless otherwise specified; in a class-AB production circuit.
885k
1980k
FCH
data
data
Application information
Frame structure
Parameter
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio (885 kHz)
adjacent channel power ratio (1980 kHz)
Dq
2
2 symbols
2 symbols
44 symbols
= 130 mA; P
= 3500 MHz; f
Rev. 01 — 3 February 2009
30 subchannels; P
4 subchannels
26 subchannels
30 subchannels
L
3
= P
BLF6G38-10; BLF6G38-10G
= 3600 MHz; RF performance at V
L(1dB)
; f = 3600 MHz.
L
= P
L(nom)
Modulation technique
QPSK1/2
64QAM3/4
64QAM3/4
Conditions
P
P
P
P
P
+ 3.86 dB.
L(AV)
L(AV)
L(AV)
L(AV)
L(AV)
WiMAX power LDMOS transistor
= 2 W
= 2 W
= 2 W
= 2 W
= 2 W
DS
= 28 V; I
[1]
[1]
g
Min Typ Max Unit
-
13
-
18
-
-
/ T
© NXP B.V. 2009. All rights reserved.
b
Dq
= 1 / 8;
2
14
20
= 130 mA;
10 -
49
64
Data length
3 bit
692 bit
10000 bit
-
-
-
46
61
4 of 15
W
dB
dB
%
dBc
dBc