BLF6G38LS-100,112 NXP Semiconductors, BLF6G38LS-100,112 Datasheet - Page 13

• Manufacturer Part Number: BLF6G38LS-100,112
• Description: IC WIMAX 3.8GHZ 2-LDMOST
• Manufacturer: NXP Semiconductors

Specifications of BLF6G38LS-100,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 3.4GHz
• Gain: 13dB
• Voltage - Rated: 65V
• Current Rating: 34A
• Current - Test: 1.05A
• Voltage - Test: 28V
• Power - Output: 18.5W
• Minimum Operating Temperature: - 55 C
• Mounting Style: Screw
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.18 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 10.9 A
• Power Dissipation: 57.7 W
• Maximum Operating Temperature: + 175 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 130W(Typ)
• Power Gain (typ)@vds: 13@28VdB
• Frequency (min): 3.4GHz
• Frequency (max): 3.6GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 12S
• Drain Source Resistance (max): 150@6.15Vmohm
• Reverse Capacitance (typ): 2.6@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 21.5%
• Mounting: Surface Mount
• Mode Of Operation: 1-Carrier N-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061301112; BLF6G38LS-100; BLF6G38LS-100

NXP Semiconductors
10. Abbreviations
11. Revision history
Table 12.
BLF6G38-10_BLF6G38-10G_1
Product data sheet
Document ID
BLF6G38-10_BLF6G38-10G_1
Revision history
Table 11.
Acronym
CCDF
CW
EVM
FCH
FFT
IBW
IS-95
LDMOS
NA
N-CDMA
PAR
PUSC
RF
SMD
VSWR
WCS
WiMAX
Abbreviations
Release date
20090203
Description
Complementary Cumulative Distribution Function
Continuous Wave
Error Vector Magnitude
Frame control Header
Fast Fourier Transform
Instantaneous BandWidth
Interim Standard 95
Laterally Diffused Metal-Oxide Semiconductor
North American
Narrowband Code Division Multiple Access
Peak-to-Average power Ratio
Partial Usage of SubChannels
Radio Frequency
Surface Mounted Device
Voltage Standing-Wave Ratio
Wireless Communications Service
Worldwide Interoperability for Microwave Access
Rev. 01 — 3 February 2009
BLF6G38-10; BLF6G38-10G
Data sheet status
Product data sheet
WiMAX power LDMOS transistor
Change notice
-
© NXP B.V. 2009. All rights reserved.
Supersedes
-
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