BLF6G38LS-100,112 NXP Semiconductors, BLF6G38LS-100,112 Datasheet - Page 11

• Manufacturer Part Number: BLF6G38LS-100,112
• Description: IC WIMAX 3.8GHZ 2-LDMOST
• Manufacturer: NXP Semiconductors

Specifications of BLF6G38LS-100,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 3.4GHz
• Gain: 13dB
• Voltage - Rated: 65V
• Current Rating: 34A
• Current - Test: 1.05A
• Voltage - Test: 28V
• Power - Output: 18.5W
• Minimum Operating Temperature: - 55 C
• Mounting Style: Screw
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.18 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 10.9 A
• Power Dissipation: 57.7 W
• Maximum Operating Temperature: + 175 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 130W(Typ)
• Power Gain (typ)@vds: 13@28VdB
• Frequency (min): 3.4GHz
• Frequency (max): 3.6GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 12S
• Drain Source Resistance (max): 150@6.15Vmohm
• Reverse Capacitance (typ): 2.6@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 21.5%
• Mounting: Surface Mount
• Mode Of Operation: 1-Carrier N-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061301112; BLF6G38LS-100; BLF6G38LS-100

NXP Semiconductors
9. Package outline
Fig 12. Package outline SOT975B
BLF6G38-10_BLF6G38-10G_1
Product data sheet
Earless flanged ceramic package; 2 leads
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
inches
UNIT
mm
VERSION
OUTLINE
SOT975B
0.143
0.120
3.63
3.05
A
0.133
0.127
3.38
3.23
b
0.009
0.007
0.23
0.18
c
IEC
H
0.258
0.252
A
6.55
6.40
D
0.273
0.267
6.93
6.78
D
1
0.258
0.252
6.55
6.40
JEDEC
E
0
U
D
D
b
0.273
0.267
1
1
6.93
6.78
REFERENCES
E
1
Rev. 01 — 3 February 2009
1
2
0.009
0.007
0.23
0.18
F
w
11.05
10.80
0.435
0.425
JEITA
1
BLF6G38-10; BLF6G38-10G
H
M
scale
A
5
A
F
0.030
0.026
0.76
0.66
M
Q
0.253
0.247
6.43
6.27
U
1
E
1
0.253
0.247
6.43
6.27
U
U
2
2
10 mm
0.51
0.02
Q
w
1
WiMAX power LDMOS transistor
c
PROJECTION
EUROPEAN
E
© NXP B.V. 2009. All rights reserved.
ISSUE DATE
06-11-03
07-09-28
SOT975B
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