BLF246,112 NXP Semiconductors, BLF246,112 Datasheet - Page 6

• Manufacturer Part Number: BLF246,112
• Description: TRANSISTOR VHF PWR DMOS SOT121B
• Manufacturer: NXP Semiconductors

Specifications of BLF246,112

• Transistor Type: 2 N-Channel (Dual)
• Frequency: 108MHz
• Gain: 16dB
• Voltage - Rated: 65V
• Current Rating: 13A
• Current - Test: 100mA
• Voltage - Test: 28V
• Power - Output: 80W
• Package / Case: SOT-121B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933929990112

Philips Semiconductors
APPLICATION INFORMATION
RF performance in CW operation in a common source test circuit.
T
Note
1. V
Ruggedness in class-B operation
The BLF246 is capable of withstanding a load mismatch corresponding to VSWR = 50: 1 through all phases under the
following conditions: V
Noise figure
Measured with 80 W power-matched source and load in the test circuit (see Fig.9) with V
f = 108 MHz; R
2003 Aug 05
handbook, halfpage
CW, class-B
CW, class-B
CW, class-C
h
VHF power MOS transistor
= 25 C; R
V
(pF)
GS
C rs
GS
300
200
100
Fig.8 Feedback capacitance as a function of
= 0; f = 1 MHz.
0
MODE OF OPERATION
= 0 (class-C).
0
drain-source voltage; typical values.
th mb-h
GS
= 27 ; T
10
= 0.2 K/W; R
DS
= 28 V; f = 108 MHz; T
h
20
= 25 C; R
GS
= 12
30
th mb-h
V DS (V)
MGG108
unless otherwise specified.
(MHz)
108
108
108
= 0.2 K/W; F = typ. 3 dB.
f
40
h
= 25 C; R
V
6
(V)
28
28
28
DS
th mb-h
= 0.2 K/W at rated output power.
0
(A)
0.1
0.1
I
(1)
D
(W)
P
80
80
80
L
DS
= 28 V; I
typ. 18
typ. 15
(dB)
>16
Product specification
G
p
D
= 2 A;
BLF246
typ. 65
typ. 72
>55
(%)
D