BLF246,112 NXP Semiconductors, BLF246,112 Datasheet - Page 10
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BLF246,112
Manufacturer Part Number
BLF246,112
Description
TRANSISTOR VHF PWR DMOS SOT121B
Manufacturer
NXP Semiconductors
Datasheet
1.BLF246112.pdf
(15 pages)
Specifications of BLF246,112
Transistor Type
2 N-Channel (Dual)
Frequency
108MHz
Gain
16dB
Voltage - Rated
65V
Current Rating
13A
Current - Test
100mA
Voltage - Test
28V
Power - Output
80W
Package / Case
SOT-121B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
933929990112
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Philips Semiconductors
2003 Aug 05
handbook, halfpage
handbook, halfpage
VHF power MOS transistor
Class-B operation; V
P
Fig.13 Input impedance as a function of frequency
Class-B operation; V
P
Fig.15 Power gain as a function of frequency;
L
L
(dB)
( )
G p
Z i
= 80 W; T
= 80 W; T
10
15
40
30
20
10
5
0
5
0
0
0
(series components); typical values.
typical values.
h
h
= 25 C; R
= 25 C; R
50
50
DS
DS
= 28 V; I
= 28 V; I
th mb-h
th mb-h
= 0.2 K/W.
= 0.2 K/W.
100
DQ
100
DQ
= 0.1 A; R
= 0.1 A; R
x i
r i
150
150
GS
GS
= 12 ;
= 12 ;
f (MHz)
f (MHz)
MGG093
MGG092
200
200
10
handbook, halfpage
Class-B operation; V
P
Fig.14 Load impedance as a function of frequency
L
= 80 W; T
( )
Z L
6
4
2
0
0
(series components); typical values.
h
= 25 C; R
50
DS
= 28 V; I
th mb-h
= 0.2 K/W.
100
DQ
= 0.1 A; R
R L
X L
Product specification
150
GS
= 12 ;
f (MHz)
MGG094
BLF246
200