BLF7G22L-130,118 NXP Semiconductors, BLF7G22L-130,118 Datasheet - Page 3
BLF7G22L-130,118
Manufacturer Part Number
BLF7G22L-130,118
Description
TRANSISTOR PWR LDMOS SOT502A
Manufacturer
NXP Semiconductors
Specifications of BLF7G22L-130,118
Transistor Type
LDMOS
Frequency
2GHz ~ 2.2GHz
Gain
18.5dB
Voltage - Rated
65V
Power - Output
30W
Package / Case
SOT502A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current Rating
-
Noise Figure
-
Current - Test
-
Voltage - Test
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934063499118
- Current page: 3 of 110
- Download datasheet (3Mb)
NXP’s firsts in RF
1963 – First transistors and diodes on 0.75 inch wafers
1964 – First RF wideband transistor with 1.5 GHz max
1970 – BFR90, a 5 GHz RF wideband transistor
1978 – BFQ33, a 14 GHz RF wideband transistor
1989 – Output matching in common emitter base station transistors
1992 – Highest power broadcast bipolar devices
1996 – Highest performance 2 GHz LDMOS
2004 – Gen5 LDMOS which becomes the industry’s most advanced process for power amplifiers
2006 – Fully integrated Doherty transistors
2007 – Industry’s first fully integrated, silicon-based IC solution for satellite: TFF1004HN
2008 – High speed data converters based on JESD204A standard
2009 – 1kW single transistor (BLF578) power amplifier for FM radio (88 to 108 MHz)
2009 – State-of-the-art, next generation SiGe:C BiCMOS QUBiC4Xi technology
“I’m proud to present the latest edition of our RF Manual. It covers NXP’s entire range of RF products in one comprehensive manual,
and I’m convinced that you’ll find the 14
edition even more useful in your daily design work.”
th
Kind regards,
John Croteau
Sr. Vice President & General Manager
Business Line High Performance RF
RF Manual web page
www.nxp.com/rfmanual
NXP Semiconductors RF Manual 14
th
edition
5
Related parts for BLF7G22L-130,118
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
Description:
160 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
Description:
200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
Description:
250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
Description:
RF MOSFET Power 44.8dBm 2110-2170MHz
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
Description:
TRANSISTOR PWR LDMOS SOT502A
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
Description:
TRANSISTOR PWR LDMOS SOT502
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
Description:
TRANSISTOR PWR LDMOS SOT502
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
Description:
TRANS LDMOS SOT539A
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
Description:
TRANS LDMOS SOT539A
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
Description:
RF MOSFET Power Pwr LDMOS transistor
Manufacturer:
NXP Semiconductors