BLF3G22-30,112 NXP Semiconductors, BLF3G22-30,112 Datasheet - Page 9

• Manufacturer Part Number: BLF3G22-30,112
• Description: TRANSISTOR UHF PWR LDMOS SOT608
• Manufacturer: NXP Semiconductors

Specifications of BLF3G22-30,112

• Transistor Type: LDMOS
• Frequency: 2.17GHz
• Gain: 14dB
• Voltage - Rated: 65V
• Current Rating: 12A
• Current - Test: 450mA
• Voltage - Test: 28V
• Power - Output: 30W
• Package / Case: SOT-608A
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 4.5A
• Drain Source Voltage (max): 65V
• Output Power (max): 6W(Typ)
• Power Gain (typ)@vds: 14@28V/15@28VdB
• Frequency (min): 2GHz
• Frequency (max): 2.2GHz
• Package Type: CDFM
• Pin Count: 3
• Forward Transconductance (typ): 3S
• Drain Source Resistance (max): 300(Typ)mohm
• Reverse Capacitance (typ): 1.7@26VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 24%
• Mounting: Screw
• Mode Of Operation: 2-Tone CW/2-Tone W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934057338112

NXP Semiconductors
Table 8.
[1]
[2]
[3]
BLF3G22-30_1
Product data sheet
Component
C1, C2, C9,
C10
C3, C4, C11,
C12
C5
C6, C7, C13,
C14, C15, C16
C8
C17, C18
C19
C20
L1
L2
L3
L4
L5
L6
L7
L8
L9
L10
L11, L12
American Technical Ceramics type 100A or capacitor of same quality.
American Technical Ceramics type 100B or capacitor of same quality.
The striplines are on a double copper-clad Printed-Circuit Board (PCB) with Teflon dielectric (
List of components (see
Description
Tekelec variable capacitor; type 37271
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
tantalum capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
handmade; enamelled 1 mm copper
wire
stripline
stripline
stripline
stripline
stripline
stripline
stripline
stripline
stripline
stripline
Figure 9
and
Rev. 01 — 21 June 2007
Figure
[1]
[1]
[1]
[2]
[3]
[3]
[3]
[3]
[3]
[3]
[3]
[3]
[3]
[3]
10)
Value
0.6 pF to 4.5 pF
6.8 pF
2.2 pF
12 pF
10 F
1.5 F
1 nF
100 F; 63 V
-
50
43
29
10
56
9
29
41
50
17
Dimensions
2 loops;
4 mm in diameter
12 mm
18 mm
4 mm
5 mm
34.4 mm
10 mm
4 mm
20 mm
5 mm
24.5 mm
5 mm
18.4 mm
5 mm
2.4 mm
r
2.4 mm
3 mm
20 mm
3.2 mm
= 2.2); thickness = 0.79 mm.
UHF power LDMOS transistor
10 mm
2 mm
BLF3G22-30
Catalogue No.
TDK C3225X7R1H155M
© NXP B.V. 2007. All rights reserved.
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