BLF3G22-30,112 NXP Semiconductors, BLF3G22-30,112 Datasheet - Page 3

• Manufacturer Part Number: BLF3G22-30,112
• Description: TRANSISTOR UHF PWR LDMOS SOT608
• Manufacturer: NXP Semiconductors

Specifications of BLF3G22-30,112

• Transistor Type: LDMOS
• Frequency: 2.17GHz
• Gain: 14dB
• Voltage - Rated: 65V
• Current Rating: 12A
• Current - Test: 450mA
• Voltage - Test: 28V
• Power - Output: 30W
• Package / Case: SOT-608A
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 4.5A
• Drain Source Voltage (max): 65V
• Output Power (max): 6W(Typ)
• Power Gain (typ)@vds: 14@28V/15@28VdB
• Frequency (min): 2GHz
• Frequency (max): 2.2GHz
• Package Type: CDFM
• Pin Count: 3
• Forward Transconductance (typ): 3S
• Drain Source Resistance (max): 300(Typ)mohm
• Reverse Capacitance (typ): 1.7@26VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 24%
• Mounting: Screw
• Mode Of Operation: 2-Tone CW/2-Tone W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934057338112

NXP Semiconductors
5. Thermal characteristics
6. Characteristics
7. Application information
BLF3G22-30_1
Product data sheet
Table 5.
[1]
Table 6.
T
Table 7.
[1]
Symbol
R
Symbol Parameter
V
V
I
I
I
g
R
C
Symbol
Mode of operation: Two-tone CW (100 kHz tone spacing); f = 2170 MHz; I
G
RL
IMD3
Mode of operation: Two-tone W-CDMA; 3GPP test model 1; 1 - 64 DPCH with 66 % clipping;
f
G
RL
IMD3
ACPR
DSS
DSX
GSS
1
j
fs
D
D
(BR)DSS
GS(th)
th(j-case)
DS(on)
rs
p
p
= 25 C unless otherwise specified
= 2115 MHz; f
in
in
Thermal resistance is determined under specified RF operating conditions
Measured within 10 kHz bandwidth.
drain-source breakdown voltage V
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance V
feedback capacitance
Parameter
thermal resistance from junction to case
Thermal characteristics
Characteristics
Application information
Parameter
power gain
input return loss
drain efficiency
third order intermodulation
distortion
power gain
input return loss
drain efficiency
third order intermodulation
distortion
adjacent channel power ratio P
2
= 2165 MHz; I
Rev. 01 — 21 June 2007
Dq
= 450 mA
Conditions
V
V
V
V
V
V
I
V
f = 1 MHz
Conditions
P
P
P
P
P
P
P
P
P
D
GS
DS
GS
GS
DS
GS
DS
GS
GS
L(PEP)
L(PEP)
L(PEP)
L(PEP)
L(PEP)
L(AV)
L(AV)
L(AV)
L(AV)
L(AV)
= 2.5 A
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 15 V; V
= V
= 0 V; V
= 6 W
= 6 W
= 6 W
= 6 W
= 6 W
= 30 W
= 30 W
= 30 W
= 30 W
< 6 W
GS(th)
GS(th)
D
Conditions
T
DS
DS
D
D
= 0.7 mA
h
+ 9 V;
+ 6 V;
= 70 mA
= 3.5 A
DS
= 25 C
= 26 V
= 26 V;
= 0 V
UHF power LDMOS transistor
[1]
Min
-
-
-
-
-
13
-
18
-
-
BLF3G22-30
Typ
14
33
< 50
15
21
Min Typ Max Unit
65
2.0
-
9
-
-
-
-
Dq
15
24
10
38
42
© NXP B.V. 2007. All rights reserved.
= 450 mA
-
-
-
-
-
3
0.3
1.7
[1]
Max
-
-
-
-
-
-
-
8
35
38
Typ
1.85 K/W
-
3.0
1.5
-
150 nA
-
-
-
Unit
dB
dB
%
dBc
dBc
dB
dB
%
dBc
dBc
3 of 13
Unit
V
V
A
S
pF
A