BLA1011-2,112 NXP Semiconductors, BLA1011-2,112 Datasheet - Page 8

TRANS LDMOS NCH 75V SOT538A

BLA1011-2,112

Manufacturer Part Number
BLA1011-2,112
Description
TRANS LDMOS NCH 75V SOT538A
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLA1011-2,112

Transistor Type
LDMOS
Frequency
1.03GHz ~ 1.09GHz
Gain
16dB
Voltage - Rated
75V
Current Rating
2.2A
Current - Test
50mA
Voltage - Test
36V
Power - Output
2W
Package / Case
SOT-538A
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.2 Ohms
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
2.2 A
Power Dissipation
10 W
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Application
Avionics
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
75V
Output Power (max)
2W
Power Gain (typ)@vds
16(Min)@36VdB
Frequency (min)
1.03GHz
Frequency (max)
1.09GHz
Package Type
CDIP SMD
Pin Count
3
Forward Transconductance (typ)
0.5S
Drain Source Resistance (max)
1200(Typ)@10Vmohm
Input Capacitance (typ)@vds
11@26VpF
Output Capacitance (typ)@vds
9@26VpF
Reverse Capacitance (typ)
0.5@26VpF
Operating Temp Range
-65C to 200C
Mounting
Surface Mount
Mode Of Operation
Class-AB
Number Of Elements
1
Power Dissipation (max)
10000mW
Vswr (max)
5
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
 Details
Other names
934056834112
BLA1011-2
BLA1011-2
Philips Semiconductors
2003 Nov 19
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
Avionics LDMOS transistor
CAUTION
8
Product specification
BLA1011-2

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