BLA1011-2,112 NXP Semiconductors, BLA1011-2,112 Datasheet - Page 3
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BLA1011-2,112
Manufacturer Part Number
BLA1011-2,112
Description
TRANS LDMOS NCH 75V SOT538A
Manufacturer
NXP Semiconductors
Datasheet
1.BLA1011-2112.pdf
(9 pages)
Specifications of BLA1011-2,112
Transistor Type
LDMOS
Frequency
1.03GHz ~ 1.09GHz
Gain
16dB
Voltage - Rated
75V
Current Rating
2.2A
Current - Test
50mA
Voltage - Test
36V
Power - Output
2W
Package / Case
SOT-538A
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.2 Ohms
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
2.2 A
Power Dissipation
10 W
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Application
Avionics
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
75V
Output Power (max)
2W
Power Gain (typ)@vds
16(Min)@36VdB
Frequency (min)
1.03GHz
Frequency (max)
1.09GHz
Package Type
CDIP SMD
Pin Count
3
Forward Transconductance (typ)
0.5S
Drain Source Resistance (max)
1200(Typ)@10Vmohm
Input Capacitance (typ)@vds
11@26VpF
Output Capacitance (typ)@vds
9@26VpF
Reverse Capacitance (typ)
0.5@26VpF
Operating Temp Range
-65C to 200C
Mounting
Surface Mount
Mode Of Operation
Class-AB
Number Of Elements
1
Power Dissipation (max)
10000mW
Vswr (max)
5
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Details
Other names
934056834112
BLA1011-2
BLA1011-2
BLA1011-2
BLA1011-2
Philips Semiconductors
THERMAL CHARACTERISTICS
Notes
1. Thermal impedance is determined under RF operating conditions with pulsed bias and T
2. Typical value for mounting on PCB with 32 0.4 mm thermal vias with 20 m tin plating and thermal compound
CHARACTERISTICS
T
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. T
Ruggedness in class-AB operation
The BLA1011-2 is capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the
operating conditions.
Typical impedance values
2003 Nov 19
Z
R
V
V
I
I
I
g
R
C
C
C
Pulsed class-AB;
t
j
DSS
DSX
GSS
p
fs
SYMBOL
th(j-mb)
SYMBOL
(BR)DSS
GSth
th(mb-h)
= 25 C unless otherwise specified.
DSon
is
os
rs
Avionics LDMOS transistor
= 50 s;
FREQUENCY
OPERATION
between PCB and heatsink.
MODE OF
(MHz)
1030
1060
1090
= 2%
thermal impedance from junction to mounting base note 1
thermal resistance from mounting base to heatsink
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
on-state drain current
gate leakage current
forward transconductance
drain-source on-state resistance
input capacitance
output capacitance
feedback capacitance
1030 to 1090
1.51 + j 11.76
1.51 + j 11.26
1.52 + j 10.77
PARAMETER
(MHz)
( )
Z
f
S
PARAMETER
V
(V)
36
6.7 + j 5.9
5.1 + j 6.6
DS
6.9 + j 5
( )
Z
L
V
V
V
V
V
V
V
V
V
V
GS
DS
GS
GS
GS
DS
GS
GS
GS
GS
(mA)
I
50
DQ
= 0; I
= 10 V; I
= 0; V
= V
= 15 V; V
= 10 V; I
= 10 V; I
= 0 V; V
= 0 V; V
= 0 V; V
h
= 25 C; R
GSth
3
D
CONDITIONS
DS
= 0.2 mA
+ 9 V; V
DS
DS
DS
(W)
D
D
D
P
= 26 V
2
L
= 20 mA
= 0.75 A
= 0.75 A
DS
= 26 V; f = 1 MHz
= 26 V; f = 1 MHz
= 26 V; f = 1 MHz
note 2
= 0
th mb-h
DS
(dB)
>16
CONDITIONS
G
= 10 V
= 6.5 K/W unless otherwise specified.
p
(ns)
<15
t
r
75
2
2.8
MIN.
h
(ns)
<15
= 25 C.
0.5
1.2
11
9
0.5
t
TYP.
f
VALUE
Product specification
6.5
1
BLA1011-2
PULSE DROOP
5
0.1
40
MAX.
(dB)
<0.5
UNIT
K/W
K/W
V
V
mA
A
nA
S
pF
pF
pF
UNIT