VRF148A Microsemi Power Products Group, VRF148A Datasheet

MOSFET RF PWR N-CH 50V 30W M113

VRF148A

Manufacturer Part Number
VRF148A
Description
MOSFET RF PWR N-CH 50V 30W M113
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of VRF148A

Transistor Type
N-Channel
Frequency
30MHz
Gain
18dB
Voltage - Rated
170V
Current Rating
6A
Current - Test
100mA
Voltage - Test
50V
Power - Output
30W
Package / Case
M113
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Other names
VRF148AMP
VRF148AMP

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
VRF148A
Quantity:
1 400
Part Number:
VRF148A
Manufacturer:
MICROSEMI/美高森美
Quantity:
20 000
Maximum Ratings
The VRF148A is a gold-metallized silicon n-channel RF power transistor
designed for broadband commercial and military applications requiring high
power and gain without compromising reliability, ruggedness, or inter-modulation
distortion.
Static Electrical Characteristics
Thermal Characteristics
FEATURES
• Improved Ruggedness V
• 30W with 20dB Typical Gain @ 30MHz, 50V
• 30W with 16dB Typical Gain @ 175MHz, 50V
• Excellent Stability & Low IMD
• Common Source Confi guration
• RoHS Compliant
Symbol
Symbol
Symbol
V
RF POWER VERTICAL MOSFET
V
V
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
R
(BR)DSS
I
V
T
DS(ON)
I
GS(TH)
V
DSS
GSS
g
P
T
I
θ JC
STG
DSS
fs
D
GS
D
J
Parameter
Drain-Source Breakdown Voltage (V
On State Drain Voltage (I
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Forward Transconductance (V
Gate Threshold Voltage (V
Characteristic
Junction to Case Thermal Resistance
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Gate-Source Voltage
Total Device dissipation @ T
Storage Temperature Range
Operating Junction Temperature
(BR)DSS
= 170 V
D(ON)
DS
Microsemi Website - http://www.microsemi.com
= 10V, I
C
= 2.5A, V
DS
= 25°C
C
= 10V, I
= 25°C
DS
DS
= ±20V, V
GS
D
= 100V, V
= 10mA)
= 0V, I
GS
D
• 30:1 Load VSWR Capability at Specifi ed Operating Conditions
• Nitride Passivated
• Refractory Gold Metallization
• High Voltage Replacement for MRF148A
= 10V)
= 2.5A)
D
DS
= 1mA)
GS
= 0V)
= 0V)
All Ratings: T
C
=25°C unless otherwise specifi ed
Min
170
Min
0.8
2.9
-65 to 150
VRF148A
Typ
170
±40
200
115
3.0
Typ
3.6
6
50V, 30W, 175MHz
VRF148A
Max
Max
1.52
5.0
0.1
1.0
4.4
mhos
°C/W
Unit
Unit
Unit
mA
μA
°C
W
V
V
V
V
A

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VRF148A Summary of contents

Page 1

... RF POWER VERTICAL MOSFET The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. FEATURES • Improved Ruggedness V = 170 V (BR)DSS • 30W with 20dB Typical Gain @ 30MHz, 50V • ...

Page 2

... Max 20 -50 -70 20 250μs PULSE TEST<0.5 % DUTY 18 CYCLE -55° 25° 125° DRAIN-TO-SOURCE VOLTAGE (V) DS FIGURE 2, Transfer Characteristics 10 Pdmax I DMax R ds(on 125° 75° 100 V , DRAIN-TO-SOURCE VOLTAGE (V) DS FIGURE 4, Forward Safe Operating Area VRF148A Unit pF Unit Unit dB 10 200 ...

Page 3

... Peak θ 1.0 −30 Vdd=28V, Idq = 250mA, Freq=175MHz IM3 −35 −40 IM5 −45 − OUTPUT POWER (WATTS PEP) out Figure 7. IMD versus P OUT 60 Vdd=28V, Idq = 250mA, Freq=175MHz 0 INPUT POWER (WATTS PEP) out Figure 9. P versus P IN OUT VRF148A 40 2.5 ...

Page 4

... MHz test circuit 175 MHz test circuit VRF148A ...

Page 5

... C 0.229 0.281 5.82 7.13 D 0.215 0.235 5.47 5.96 0.085 0.105 2.16 2. 0.150 0.108 3.81 4.57 J 0.004 0.006 0.11 0.15 K 0.395 0.405 10.04 10. 0.113 0.130 2.88 3.30 R 0.245 0.255 6.23 6.47 S 0.790 0.810 20.07 20.57 U 0.720 0.730 18.29 18.54 VRF148A ...

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