BLF6G22-45,135 NXP Semiconductors, BLF6G22-45,135 Datasheet - Page 8

• Manufacturer Part Number: BLF6G22-45,135
• Description: IC BASESTATION DRIVER SOT608A
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22-45,135

• Package / Case: SOT-608A
• Transistor Type: LDMOS
• Frequency: 2.11GHz
• Gain: 18.5dB
• Voltage - Rated: 65V
• Current Rating: 1.5µA
• Current - Test: 405mA
• Voltage - Test: 28V
• Power - Output: 2.5W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060066135; BLF6G22-45 /T3; BLF6G22-45 /T3

NXP Semiconductors
10. Abbreviations
11. Revision history
Table 10.
BLF6G22-45_2
Product data sheet
Document ID
BLF6G22-45_2
Modifications:
BLF6G22-45_BLF6G22S-45_1 20080219
Revision history
Table 9.
Acronym
3GPP
CCDF
CW
DPCH
IMD
LDMOS
PAR
PDPCH
RF
VSWR
W-CDMA
Release date Data sheet status
20080421
•
•
Abbreviations
The combined data sheet is split up into two separate data sheets.
Table 1
Description
3rd Generation Partnership Project
Complementary Cumulative Distribution Function
Continuous Waveform
Dedicated Physical CHannel
InterModulation Distortion
Laterally Diffused Metal-Oxide Semiconductor
Peak-to-Average power Ratio
transmission Power of the Dedicated Physical CHannel
Radio Frequency
Voltage Standing-Wave Ratio
Wideband Code Division Multiple Access
and
Product data sheet
Preliminary data sheet -
Table
Rev. 02 — 21 April 2008
7: ACPR values changed.
Change notice Supersedes
-
BLF6G22-45_BLF6G22S-45_1
-
Power LDMOS transistor
BLF6G22-45
© NXP B.V. 2008. All rights reserved.
8 of 10