BLF6G22-45,135 NXP Semiconductors, BLF6G22-45,135 Datasheet - Page 8
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BLF6G22-45,135
Manufacturer Part Number
BLF6G22-45,135
Description
IC BASESTATION DRIVER SOT608A
Manufacturer
NXP Semiconductors
Specifications of BLF6G22-45,135
Package / Case
SOT-608A
Transistor Type
LDMOS
Frequency
2.11GHz
Gain
18.5dB
Voltage - Rated
65V
Current Rating
1.5µA
Current - Test
405mA
Voltage - Test
28V
Power - Output
2.5W
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.2 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934060066135
BLF6G22-45 /T3
BLF6G22-45 /T3
BLF6G22-45 /T3
BLF6G22-45 /T3
NXP Semiconductors
10. Abbreviations
11. Revision history
Table 10.
BLF6G22-45_2
Product data sheet
Document ID
BLF6G22-45_2
Modifications:
BLF6G22-45_BLF6G22S-45_1 20080219
Revision history
Table 9.
Acronym
3GPP
CCDF
CW
DPCH
IMD
LDMOS
PAR
PDPCH
RF
VSWR
W-CDMA
Release date Data sheet status
20080421
•
•
Abbreviations
The combined data sheet is split up into two separate data sheets.
Table 1
Description
3rd Generation Partnership Project
Complementary Cumulative Distribution Function
Continuous Waveform
Dedicated Physical CHannel
InterModulation Distortion
Laterally Diffused Metal-Oxide Semiconductor
Peak-to-Average power Ratio
transmission Power of the Dedicated Physical CHannel
Radio Frequency
Voltage Standing-Wave Ratio
Wideband Code Division Multiple Access
and
Product data sheet
Preliminary data sheet -
Table
Rev. 02 — 21 April 2008
7: ACPR values changed.
Change notice Supersedes
-
BLF6G22-45_BLF6G22S-45_1
-
Power LDMOS transistor
BLF6G22-45
© NXP B.V. 2008. All rights reserved.
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