BLF6G22-45,135 NXP Semiconductors, BLF6G22-45,135 Datasheet
![IC BASESTATION DRIVER SOT608A](/photos/5/64/56476/sot-608a_sot608a_pkg_sml.jpg)
BLF6G22-45,135
Specifications of BLF6G22-45,135
BLF6G22-45 /T3
BLF6G22-45 /T3
Related parts for BLF6G22-45,135
BLF6G22-45,135 Summary of contents
Page 1
... BLF6G22-45 Power LDMOS transistor Rev. 02 — 21 April 2008 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. RF performance at T Mode of operation 2-carrier W-CDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 0.01 % probability on CCDF per carrier; ...
Page 2
... Limiting values Parameter Conditions drain-source voltage gate-source voltage storage temperature junction temperature Thermal characteristics Parameter thermal resistance from junction to case Rev. 02 — 21 April 2008 BLF6G22-45 Power LDMOS transistor Simplified outline Graphic symbol 1 [ Min - 0 Conditions ...
Page 3
... Mode of operation: 2-carrier W-CDMA; PAR 7 0.01 % probability on CCDF; 3GPP test model PDPCH performance at V class-AB production test circuit. Symbol P L(AV ACPR 7.1 Ruggedness in class-AB operation The BLF6G22-45 is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 405 mA BLF6G22-45_2 Product data sheet Characteristics Conditions drain-source breakdown V voltage ...
Page 4
... BLF6G22-45_2 Product data sheet (dB 405 mA 2170 MHz One-tone CW power gain and drain efficiency as functions of load power; typical values 001aah605 60 IMD D (%) (dBc (W) L(PEP) = 2170 MHz; 1 Fig 3. Rev. 02 — 21 April 2008 BLF6G22-45 Power LDMOS transistor 001aah604 60 D (%) ( IMD3 30 IMD5 40 IMD7 405 mA 2170 MHz; DS ...
Page 5
... P (W) L(AV) = 2162.5 MHz; 1 Fig See Table 8 for list of components. Test circuit for operation at 2110 MHz and 2170 MHz Rev. 02 — 21 April 2008 BLF6G22-45 Power LDMOS transistor 405 mA 2162.5 MHz 2167.5 MHz; carrier spacing 5 MHz. 2 2-carrier W-CDMA adjacent power channel ratio as a function of average load power; ...
Page 6
... Rev. 02 — 21 April 2008 BLF6G22-45 Power LDMOS transistor C16 C15 C10 C14 C11 C12 C13 ...
Page 7
... REFERENCES JEDEC EIAJ Rev. 02 — 21 April 2008 BLF6G22-45 Power LDMOS transistor 1.70 20.45 9.91 15.24 0.25 0.51 1.35 9 ...
Page 8
... PAR PDPCH RF VSWR W-CDMA 11. Revision history Table 10. Revision history Document ID BLF6G22-45_2 Modifications: BLF6G22-45_BLF6G22S-45_1 20080219 BLF6G22-45_2 Product data sheet Abbreviations Description 3rd Generation Partnership Project Complementary Cumulative Distribution Function Continuous Waveform Dedicated Physical CHannel InterModulation Distortion Laterally Diffused Metal-Oxide Semiconductor Peak-to-Average power Ratio ...
Page 9
... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 21 April 2008 BLF6G22-45 Power LDMOS transistor © NXP B.V. 2008. All rights reserved ...
Page 10
... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 21 April 2008 Document identifier: BLF6G22-45_2 ...