NE5520279A-T1-A CEL, NE5520279A-T1-A Datasheet - Page 8

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NE5520279A-T1-A

Manufacturer Part Number
NE5520279A-T1-A
Description
MOSFET LD N-CHAN 3.2V 79A
Manufacturer
CEL
Datasheets

Specifications of NE5520279A-T1-A

Transistor Type
LDMOS
Frequency
1.8GHz
Gain
10dB
Voltage - Rated
15V
Current Rating
600mA
Current - Test
700mA
Voltage - Test
3.2V
Power - Output
32dBm
Package / Case
79A
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
15 V
Gate-source Breakdown Voltage
5 V
Continuous Drain Current
0.6 A
Power Dissipation
12.5 W
Mounting Style
SMD/SMT
Forward Transconductance Gfs (max / Min)
0.0013 S
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
PACKAGE DIMENSIONS
79A (UNIT: mm)
79A PACKAGE RECOMMENDED P.C.B. LAYOUT (UNIT: mm)
6
Gate
Gate
4.2 MAX.
5.7 MAX.
Source
0.4±0.15
Data Sheet PU10123EJ03V0DS
Drain
0.5
4.0
1.7
6.1
0.5
Source
Through Hole: 0.2 × 33
Drain
Gate
Stop up the hole with a rosin or
something to avoid solder flow.
φ
(Bottom View)
1.5±0.2
3.6±0.2
Source
0.8 MAX.
Drain
NE5520279A

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