NE5520279A-T1-A CEL, NE5520279A-T1-A Datasheet - Page 3

• Manufacturer Part Number: NE5520279A-T1-A
• Description: MOSFET LD N-CHAN 3.2V 79A
• Manufacturer: CEL

Specifications of NE5520279A-T1-A

• Transistor Type: LDMOS
• Frequency: 1.8GHz
• Gain: 10dB
• Voltage - Rated: 15V
• Current Rating: 600mA
• Current - Test: 700mA
• Voltage - Test: 3.2V
• Power - Output: 32dBm
• Package / Case: 79A
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 15 V
• Gate-source Breakdown Voltage: 5 V
• Continuous Drain Current: 0.6 A
• Power Dissipation: 12.5 W
• Mounting Style: SMD/SMT
• Forward Transconductance Gfs (max / Min): 0.0013 S
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document No. PU10123EJ03V0DS (3rd edition)
Date Published July 2003 CP(K)
Printed in Japan
DESCRIPTION
transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology
(our WSi gate laterally diffused MOS FET) and housed in a surface mount package. This device can deliver 32.0
dBm output power with 45% power added efficiency at 1.8 GHz under the 3.2 V supply voltage.
FEATURES
• High output power
• High power added efficiency : η
• High linear gain
• Surface mount package
• Single supply
APPLICATION
• Digital cellular phones
ORDERING INFORMATION
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
NE5520279A-T1
NE5520279A-T1A
Remark To order evaluation samples, contact your nearby sales office.
The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the
Part Number
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Part number for sample order: NE5520279A
3.2 V OPERATION SILICON RF POWER LDMOS FET
FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS
: 3.2 V DCS1800 Handsets
Package
79A
: P
: G
: 5.7 × 5.7 × 1.1 mm MAX.
: V
add
out
DS
L
= 10 dB TYP. (V
= 32.0 dBm TYP. (V
= 2.8 to 6.0 V
= 45% TYP. (V
The mark
DATA SHEET
Marking
shows major revised points.
A2
DS
DS
= 3.2 V, I
= 3.2 V, I
DS
= 3.2 V, I
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• Qty 1 kpcs/reel
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• Qty 5 kpcs/reel
Dset
Dset
= 700 mA, f = 1.8 GHz, P
= 700 mA, f = 1.8 GHz, P
Dset
SILICON POWER MOS FET
= 700 mA, f = 1.8 GHz, P
NE5520279A
Supplying Form
   
NEC Compound Semiconductor Devices 2001, 2003
in
in
= 25 dBm)
= 5 dBm)
in
= 25 dBm)