NE5520279A-T1-A CEL, NE5520279A-T1-A Datasheet - Page 4

• Manufacturer Part Number: NE5520279A-T1-A
• Description: MOSFET LD N-CHAN 3.2V 79A
• Manufacturer: CEL

Specifications of NE5520279A-T1-A

• Transistor Type: LDMOS
• Frequency: 1.8GHz
• Gain: 10dB
• Voltage - Rated: 15V
• Current Rating: 600mA
• Current - Test: 700mA
• Voltage - Test: 3.2V
• Power - Output: 32dBm
• Package / Case: 79A
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 15 V
• Gate-source Breakdown Voltage: 5 V
• Continuous Drain Current: 0.6 A
• Power Dissipation: 12.5 W
• Mounting Style: SMD/SMT
• Forward Transconductance Gfs (max / Min): 0.0013 S
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS (T
RECOMMENDED OPERATING CONDITIONS
ELECTRICAL CHARACTERISTICS
(T
2
Gate to Source Leak Current
Drain to Source Leakage Current
(Zero Gate Voltage Drain Current)
Gate Threshold Voltage
Thermal Resistance
Transconductance
Drain to Source Breakdown Voltage
Output Power
Drain Current
Power Added Efficiency
Linear Gain
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current (Pulse Test)
Total Power Dissipation
Channel Temperature
Storage Temperature
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Input Power
A
Note Duty Cycle 50%, T
Notes 1. DC performance is 100% testing. RF performance is testing several samples per wafer.
= +25° ° ° ° C, unless otherwise specified, using NEC standard test fixture)
2. P
Note2
Parameter
Parameter
Parameter
Wafer rejection criteria for standard devices is 1 reject for several samples.
in
= 5 dBm
on
≤ 1 s
Symbol
Symbol
Symbol
BV
I
V
V
P
T
D
T
I
I
η
P
G
I
V
V
V
R
G
GSS
DSS
P
DS
GS
D
Note
stg
I
tot
ch
I
add
out
D
GS
DSS
DS
D
th
th
m
L
in
A
= +25° ° ° ° C)
V
V
V
Channel to Case
V
I
f = 1.8 GHz, V
P
I
Duty Cycle 50%, T
f = 1.8 GHz, V
DSS
Dset
Data Sheet PU10123EJ03V0DS
GS
DS
DS
DS
in
= 25 dBm,
= 6.0 V
= 3.5 V, I
= 3.2 V, I
= 5.0 V
= 10 µ A
= 700 mA (RF OFF), Note1
−55 to +125
Ratings
Test Conditions
Test Conditions
15.0
12.5
125
5.0
0.6
1.2
D
D
DS
DS
= 1 mA
= 700 mA
= 3.2 V,
= 3.2 V
on
≤ 1 s
Unit
°C
°C
W
V
V
A
A
MIN.
MIN.
30.5
2.8
1.0
24
15
40
0
−
−
−
−
−
−
−
TYP.
TYP.
32.0
800
800
3.0
2.0
1.4
1.3
25
18
45
10
−
−
−
NE5520279A
MAX.
1 000
MAX.
100
100
6.0
3.0
1.9
30
8
−
−
−
−
−
−
°C/W
dBm
dBm
Unit
Unit
mA
mA
nA
nA
dB
%
V
V
V
S
V