ATF-531P8-TR1 Avago Technologies US Inc., ATF-531P8-TR1 Datasheet - Page 5

IC PHEMT 2GHZ 4V 135MA 8-LPCC

ATF-531P8-TR1

Manufacturer Part Number
ATF-531P8-TR1
Description
IC PHEMT 2GHZ 4V 135MA 8-LPCC
Manufacturer
Avago Technologies US Inc.
Datasheet

Specifications of ATF-531P8-TR1

Gain
20dB
Package / Case
8-LPCC
Current Rating
300mA
Power - Output
24.5dBm
Frequency
2GHz
Transistor Type
pHEMT FET
Noise Figure
0.6dB
Current - Test
135mA
Voltage - Test
4V
Power Dissipation Pd
1W
Rf Transistor Case
LPCC
No. Of Pins
8
Frequency Max
6GHz
Noise Figure Typ
0.6dB
Frequency Min
50MHz
Continuous Drain Current Id
3.7µA
Drain Current Idss Max
135mA
Drain Source Voltage Vds
4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ATF-531P8-TR1
Manufacturer:
AVAGO
Quantity:
20 702
Part Number:
ATF-531P8-TR1
Manufacturer:
AVAGO/安华高
Quantity:
20 000
Part Number:
ATF-531P8-TR1G
Manufacturer:
OPTEK
Quantity:
101
Part Number:
ATF-531P8-TR1G
Manufacturer:
AVAGO
Quantity:
10 000
Part Number:
ATF-531P8-TR1G
Manufacturer:
AVAGO/安华高
Quantity:
20 000
ATF-531P8 Typical Performance Curves (at 5°C unless specified otherwise)
Tuned for Optimal OIP3
Note:
Bias current for the above charts are quiescent conditions. Actual level may increase or decrease depending on amount of RF drive. The objective
of load pull is to optimize OIP3 and therefore may trade‑off Small Signal Gain, P1dB and VSWR.
5
Figure 8. OIP3 vs. I
Figure 14. P1dB vs. I
Figure 11. Small Signal Gain vs. I
at 900 MHz.
45
40
35
30
25
20
17
16
15
14
13
12
11
10
30
25
20
15
10
75
75
75
90
90
90
105
105
105
ds
120
I
120
I
120
I
ds
dq
ds
dq
and V
(mA)
(mA)
(mA)
and V
135
135
135
ds
ds
at 900 MHz.
150
150
150
at 900 MHz.
3V
4V
5V
3V
4V
5V
ds
3V
4V
5V
165
165
165
and V
180
180
180
ds
Figure 9. OIP3 vs. I
Figure 12. Small Signal Gain vs. I
at 2 GHz.
Figure 15. P1dB vs. I
45
40
35
30
25
20
17
16
15
14
13
12
11
10
30
25
20
15
10
75
75
75
90
90
90
105
105
105
ds
120
120
120
I
I
I
ds
ds
dq
dq
and V
(mA)
(mA)
(mA)
and V
135
135
135
ds
ds
at 2 GHz.
150
150
150
at 2 GHz.
3V
4V
5V
ds
3V
4V
5V
3V
4V
5V
165
165
165
and V
180
180
180
ds
Figure 10. OIP3 vs. I
Figure 13. Small Signal Gain vs. I
at 3.9 GHz.
Figure 16. P1dB vs. I
45
40
35
30
25
20
12
10
30
25
20
15
10
8
6
4
2
0
75
75
75
90
90
90
105
105
105
120
I
120
I
120
I
ds
dq
ds
ds
dq
(mA)
(mA)
(mA)
and V
and V
135
135
135
ds
ds
150
150
150
at 3.9 GHz.
at 3.9 GHz.
3V
4V
5V
ds
3V
4V
5V
3V
4V
5V
165
165
165
and V
180
180
180
ds

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