ATF-531P8-TR1 Avago Technologies US Inc., ATF-531P8-TR1 Datasheet - Page 4
![IC PHEMT 2GHZ 4V 135MA 8-LPCC](/photos/19/9/190993/4532901_sml.jpg)
ATF-531P8-TR1
Manufacturer Part Number
ATF-531P8-TR1
Description
IC PHEMT 2GHZ 4V 135MA 8-LPCC
Manufacturer
Avago Technologies US Inc.
Datasheet
1.ATF-531P8-BLK.pdf
(15 pages)
Specifications of ATF-531P8-TR1
Gain
20dB
Package / Case
8-LPCC
Current Rating
300mA
Power - Output
24.5dBm
Frequency
2GHz
Transistor Type
pHEMT FET
Noise Figure
0.6dB
Current - Test
135mA
Voltage - Test
4V
Power Dissipation Pd
1W
Rf Transistor Case
LPCC
No. Of Pins
8
Frequency Max
6GHz
Noise Figure Typ
0.6dB
Frequency Min
50MHz
Continuous Drain Current Id
3.7µA
Drain Current Idss Max
135mA
Drain Source Voltage Vds
4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ATF-531P8-TR1
Manufacturer:
AVAGO
Quantity:
20 702
Part Number:
ATF-531P8-TR1
Manufacturer:
AVAGO/安华高
Quantity:
20 000
Company:
Part Number:
ATF-531P8-TR1G
Manufacturer:
OPTEK
Quantity:
101
Company:
Part Number:
ATF-531P8-TR1G
Manufacturer:
AVAGO
Quantity:
10 000
Part Number:
ATF-531P8-TR1G
Manufacturer:
AVAGO/安华高
Quantity:
20 000
Figure 7. Simplified schematic of production test board. Primary purpose is to show 15 Ohm series resistor placement in gate supply. Transmis-
sion line tapers, tee intersections, bias lines and parasitic values are not shown.
Gamma Load and Source at Optimum OIP3 Tuning Conditions
The device’s optimum OIP3 measurements were determined using a Maury load pull system at 4V, 135 mA quiesent
bias. The gamma load and source over frequency are shown in the table below:
Freq
(GHz)
0.9
2.0
3.9
5.8
4
RF Input
Mag
0.616
0.310
0.421
0.402
Gamma Source
2.2 pF
100 pF
3.3 pF
DC Supply
Gate
15 Ohm
22 nH
Ang
‑37.1
34.5
167.5
‑162.8
50 Ohm
.02 λ
110 Ohm
.03 λ
Mag
0.249
0.285
0.437
0.418
Gamma Load
DUT
Ang
130.0
168.3
‑161.6
‑134.1
110 Ohm
.03 λ
OIP3
(dBm)
40.3
41.5
41.5
41.0
50 Ohm
.02 λ
2.2 µF
DC Supply
Drain
Gain
(dB)
16.5
13.4
10.5
7.9
4.7 pF
12 nH
RF Outpu t
P1dB
(dBm)
23.4
24.8
24.7
24.7
PAE
(%)
43.2
51.9
42.8
36.6