ATF-531P8-TR1 Avago Technologies US Inc., ATF-531P8-TR1 Datasheet - Page 4

• Manufacturer Part Number: ATF-531P8-TR1
• Description: IC PHEMT 2GHZ 4V 135MA 8-LPCC
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-531P8-TR1

• Gain: 20dB
• Package / Case: 8-LPCC
• Current Rating: 300mA
• Power - Output: 24.5dBm
• Frequency: 2GHz
• Transistor Type: pHEMT FET
• Noise Figure: 0.6dB
• Current - Test: 135mA
• Voltage - Test: 4V
• Power Dissipation Pd: 1W
• Rf Transistor Case: LPCC
• No. Of Pins: 8
• Frequency Max: 6GHz
• Noise Figure Typ: 0.6dB
• Frequency Min: 50MHz
• Continuous Drain Current Id: 3.7µA
• Drain Current Idss Max: 135mA
• Drain Source Voltage Vds: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 7. Simplified schematic of production test board. Primary purpose is to show 15 Ohm series resistor placement in gate supply. Transmis-
sion line tapers, tee intersections, bias lines and parasitic values are not shown.
Gamma Load and Source at Optimum OIP3 Tuning Conditions
The device’s optimum OIP3 measurements were determined using a Maury load pull system at 4V, 135 mA quiesent
bias. The gamma load and source over frequency are shown in the table below:
Freq
(GHz)
0.9
2.0
3.9
5.8
4
RF Input
Mag
0.616
0.310
0.421
0.402
Gamma Source
2.2 pF
100 pF
3.3 pF
DC Supply
Gate
15 Ohm
22 nH
Ang
‑37.1
34.5
167.5
‑162.8
50 Ohm
.02 λ
110 Ohm
.03 λ
Mag
0.249
0.285
0.437
0.418
Gamma Load
DUT
Ang
130.0
168.3
‑161.6
‑134.1
110 Ohm
.03 λ
OIP3
(dBm)
40.3
41.5
41.5
41.0
50 Ohm
.02 λ
2.2 µF
DC Supply
Drain
Gain
(dB)
16.5
13.4
10.5
7.9
4.7 pF
12 nH
RF Outpu t
P1dB
(dBm)
23.4
24.8
24.7
24.7
PAE
(%)
43.2
51.9
42.8
36.6