BF1205C,115 NXP Semiconductors, BF1205C,115 Datasheet - Page 14

• Manufacturer Part Number: BF1205C,115
• Description: MOSFET N-CH DUAL GATE 10V SOT363
• Manufacturer: NXP Semiconductors

Specifications of BF1205C,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: N-Channel Dual Gate
• Frequency: 400MHz
• Gain: 30dB
• Voltage - Rated: 6V
• Current Rating: 30mA
• Noise Figure: 1.3dB
• Current - Test: 19mA
• Voltage - Test: 5V
• Configuration: Dual
• Continuous Drain Current: 30 mA
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 180 mW
• Transistor Polarity: N-Channel
• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 6V
• Power Gain (typ)@vds: 35@5VdB
• Noise Figure (max): 2.1dB
• Package Type: SOT-363
• Pin Count: 6
• Input Capacitance (typ)@vds: 2.2@5V@Gate 1@Amp A/3@5V@Gate 2@Amp A/2@5V@Gate 1@Amp B/3.4@5V@Gate 2@Amp BpF
• Output Capacitance (typ)@vds: 0.9@5V@Amp A/0.85@5V@Amp BpF
• Reverse Capacitance (typ): 0.02@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 180mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934058083115; BF1205C T/R; BF1205C T/R

Philips Semiconductors
BF1205C_2
Product data sheet
Fig 23. Drain current as a function of gate 1 (V
(mA)
(1) R
(2) R
(3) R
(4) R
(5) R
(6) R
(7) R
(8) R
I
D
24
16
8
0
V
R
drain supply voltage and value of RG1; typical
values.
0
G2-S
G1(b)
G1(b)
G1(b)
G1(b)
G1(b)
G1(b)
G1(b)
G1(b)
G1(b)
= 4 V; V
= 68 k .
= 82 k .
= 100 k .
= 120 k .
= 150 k .
= 180 k .
= 220 k .
= 270 k .
is connected to V
DS(a)
2
= V
G1-S(a)
GG
; see
= 0 V; T
4
Figure
V
GG
j
= 25 C;
001aaa574
V
3.
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
DS
(V)
Rev. 02 — 15 August 2006
6
GG
),
Fig 24. Drain current as a function of gate 2 voltage;
(mA)
(1) V
(2) V
(3) V
(4) V
(5) V
I
D
16
12
8
4
0
V
R
typical values.
0
GG
GG
GG
GG
GG
DS(b)
G1(b)
= 5.0 V.
= 4.5 V.
= 4.0 V.
= 3.5 V.
= 3.0 V.
= 5 V; V
= 150 k (connected to V
Dual N-channel dual gate MOS-FET
DS(a)
2
= V
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
G1-S(a)
= 0 V; T
4
GG
); see
BF1205C
V
G2-S
j
001aaa575
= 25 C;
(1)
(2)
(3)
(4)
(5)
(V)
Figure
6
3.
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