BF1205,135 NXP Semiconductors, BF1205,135 Datasheet
BF1205,135
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BF1205,135 Summary of contents
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DATA SHEET handbook, halfpage BF1205 Dual N-channel dual gate MOS-FET Product specification DISCRETE SEMICONDUCTORS MBD128 2003 Sep 30 ...
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... NXP Semiconductors Dual N-channel dual gate MOS-FET FEATURES Two low noise gain controlled amplifiers in a single package. One with a fully integrated bias and one with a partly integrated bias Internal switch reduces the number of external components Superior cross-modulation performance during AGC ...
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... NXP Semiconductors Dual N-channel dual gate MOS-FET QUICK REFERENCE DATA SYMBOL PARAMETER Per MOS-FET; unless otherwise specified V drain-source voltage DS I drain current (DC total power dissipation tot y forward transfer admittance fs C input capacitance at gate 1 ig1-ss C reverse transfer capacitance rss NF noise figure ...
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... NXP Semiconductors Dual N-channel dual gate MOS-FET 250 handbook, halfpage P tot (mW) 200 150 100 100 Fig.2 Power derating curve. STATIC CHARACTERISTICS = 25 C; per MOS-FET; unless otherwise specified SYMBOL PARAMETER V drain-source breakdown voltage (BR)DSS V gate-source breakdown voltage (BR)G1-SS V gate-source breakdown voltage (BR)G2-SS ...
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... NXP Semiconductors Dual N-channel dual gate MOS-FET 16 handbook, halfpage I D (mA (4) (5) ( ( 120 k. ( ( 150 k. ( ( 180 k. ( Fig.3 Drain currents of MOS-FET a and b as functions 2003 Sep 30 MGX430 (1) handbook, halfpage (2) ( (V) (a 180 k (a 150 k (a 120 k (see Fig.4). ...
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... NXP Semiconductors Dual N-channel dual gate MOS-FET DYNAMIC CHARACTERISTICS AMPLIFIER C; V Common source; T amb SYMBOL PARAMETER y forward transfer admittance fs C input capacitance at gate 1 ig1-ss C input capacitance at gate 2 ig2-ss C output capacitance oss C reverse transfer capacitance rss G power gain tr NF noise figure ...
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... NXP Semiconductors Dual N-channel dual gate MOS-FET GRAPHS FOR AMPLIFIER a 20 handbook, halfpage ( (2) (mA) ( 0.4 0.8 ( (5) V G2-S ( 3.5 V. (6) V G2-S ( (7) V G2-S ( 2.5 V. G2 G1-S DS Fig.5 Transfer characteristics; typical values; amplifier a. 2003 Sep 30 MGX432 handbook, halfpage (4) (5) (6) (7) 1.2 1.6 ...
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... NXP Semiconductors Dual N-channel dual gate MOS-FET 40 handbook, halfpage y fs (mS ( (4) V G2-S ( 3.5 V. (5) V G2-S ( G2 G1-S DS Fig.7 Forward transfer admittance as a function of drain current; typical values; amplifier a. 2003 Sep 30 MGX434 handbook, halfpage (1) (2) (3) (4) ( (mA) = 2 (a) ( G2-S DS Fig.8 ...
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... NXP Semiconductors Dual N-channel dual gate MOS-FET 12 handbook, halfpage I D (mA ( (2) V (b) = 4 ( Gate 1 (a) = open G1-S Fig.9 Drain current as a function of gate 2 and drain supply voltage; typical values; amplifier a. 2003 Sep 30 MGX436 (1) handbook, halfpage (2) (3) (4) ( (V) ( C. ...
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... NXP Semiconductors Dual N-channel dual gate MOS-FET 0 handbook, halfpage gain reduction ( MHz; see Fig.13 G1-S Fig.11 Gain reduction as a function of AGC voltage; typical values; amplifier a. handbook, full pagewidth R GEN 50 Ω 2003 Sep 30 MGX438 handbook, halfpage AGC (V) V see Fig.13. Fig.12 Drain current as a function of gain V AGC 10 kΩ ...
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... NXP Semiconductors Dual N-channel dual gate MOS-FET 2 10 handbook, halfpage y is (mS − − ( ( ( G2 ( mA. D Fig.14 Input admittance as a function of frequency; typical values; amplifier handbook, halfpage | (μS) ϕ ( ( ( G2 ( mA. D Fig.16 Reverse transfer admittance and phase as a function of frequency; typical values; amplifier a. 2003 Sep 30 ...
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... NXP Semiconductors Dual N-channel dual gate MOS-FET Scattering parameters: amplifier MAGNITUDE ANGLE (MHz) (ratio) (deg) 3.70 50 0.997 7.37 100 0.995 14.64 200 0.988 21.85 300 0.976 28.95 400 0.963 35.98 500 0.944 42.90 600 0.924 49.77 700 0.900 56.61 800 0 ...
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... NXP Semiconductors Dual N-channel dual gate MOS-FET SYMBOL PARAMETER X cross-modulation mod Notes 1. For the MOS-FET not in use Measured in test circuit Fig.30. GRAPHS FOR AMPLIFIER b 20 handbook, halfpage ( (2) (mA) ( 0.4 0.8 ( (5) V G2-S ( 3.5 V. (6) V G2-S ( (7) V G2-S ( 2.5 V. G2 G1-S Fig.18 Transfer characteristics; typical values; ...
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... NXP Semiconductors Dual N-channel dual gate MOS-FET 60 handbook, halfpage I G1 (μ 0.4 0.8 ( (5) V G2-S ( 3.5 V. (6) V G2-S ( (7) V G2-S ( 2.5 V. G2 G1-S Fig.20 Gate 1 current as a function of gate 1 voltage; typical values; amplifier b. 2003 Sep 30 MGX447 (2) (3) handbook, halfpage (1) (4) (5) (6) (7) 1 ...
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... NXP Semiconductors Dual N-channel dual gate MOS-FET 20 handbook, halfpage I D ( G2-S DS Fig.22 Drain current as a function of gate 1 current; typical values; amplifier b. 2003 Sep 30 MGX449 handbook, halfpage (μ ( G2 (b) = 150 k (connected Fig.23 Drain current as a function of gate 1 supply voltage (V ) ...
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... NXP Semiconductors Dual N-channel dual gate MOS-FET 20 handbook, halfpage I D (mA ( k. ( ( k. ( (3) R (b) = 100 k. ( (4) R (b) = 120 k G2-S DS G1-S R (b) = 150 k (connected see Fig. Fig.24 Drain current as a function of gate 1 (V and drain supply voltage; typical values; ...
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... NXP Semiconductors Dual N-channel dual gate MOS-FET 30 handbook, halfpage I G1 (μ ( 5 4 G1-S R (b) = 150 k (connected see Fig. Fig.26 Gate 1 current as a function of gate 2 voltage; typical values; amplifier b. 2003 Sep 30 MGX453 handbook, halfpage (1) (dBμV) (2) (3) (4) ( G2-S (V) = 3.5 V. ...
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... NXP Semiconductors Dual N-channel dual gate MOS-FET 0 handbook, halfpage gain reduction ( G1-S R (b) = 150 k (connected MHz C; see Fig.30. T amb Fig.28 Typical gain reduction as a function of AGC voltage; amplifier b. 2003 Sep 30 MGX455 handbook, halfpage (mA AGC ( amb Fig.29 Drain current as a function of gain ...
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... NXP Semiconductors Dual N-channel dual gate MOS-FET handbook, full pagewidth R GEN 50 Ω handbook, halfpage y is (mS − ( ( G2 (b)= 12 mA. D Fig.31 Input admittance as a function of frequency; typical values; amplifier b. 2003 Sep 30 V AGC 10 kΩ 4 (a) 4 Ω g2 BF1205 4 (b) 50 Ω 150 kΩ Fig.30 Cross-modulation test set-up for amplifier b. ...
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... NXP Semiconductors Dual N-channel dual gate MOS-FET 3 10 handbook, halfpage (μS) ϕ ( ( G2 ( mA. D Fig.33 Reverse transfer admittance and phase as a function of frequency; typical values; amplifier b. 2003 Sep 30 MGX459 −10 3 handbook, halfpage ϕ rs (deg) − −10 − (MHz (mS − − ( ( G2-S ...
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... NXP Semiconductors Dual N-channel dual gate MOS-FET Scattering parameters: amplifier MAGNITUDE ANGLE (MHz) (ratio) (deg) 3.76 50 0.987 7.38 100 0.985 14.63 200 0.978 21.82 300 0.968 28.92 400 0.956 35.99 500 0.941 42.93 600 0.924 49.89 700 0.905 56.57 800 0 ...
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... NXP Semiconductors Dual N-channel dual gate MOS-FET PACKAGE OUTLINE Plastic surface-mounted package; 6 leads y 6 pin 1 index DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.30 0.25 mm 0.1 0.20 0.8 0.10 OUTLINE VERSION IEC SOT363 2003 Sep scale 2.2 1.35 2.2 1.3 ...
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... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...
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... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...