BF1210,115 NXP Semiconductors, BF1210,115 Datasheet - Page 2

• Manufacturer Part Number: BF1210,115
• Description: MOSFET N-CH DUAL GATE 6V UMT6
• Manufacturer: NXP Semiconductors

Specifications of BF1210,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: N-Channel Dual Gate
• Frequency: 400MHz
• Gain: 31dB
• Voltage - Rated: 6V
• Current Rating: 30mA
• Noise Figure: 0.9dB
• Current - Test: 19mA
• Voltage - Test: 5V
• Configuration: Dual
• Continuous Drain Current: 30 mA
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 180 mW
• Transistor Polarity: N-Channel
• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 6V
• Power Gain (typ)@vds: 35@5V@Amp A/36@5V@Amp BdB
• Noise Figure (max): 1.9dB
• Package Type: SOT-363
• Pin Count: 6
• Input Capacitance (typ)@vds: 2.2@5V@Gate 1@Amp A/3@5V@Gate 2@Amp A/1.9@5V@Gate 1@Amp B/3.4@5V@Gate 2@Amp BpF
• Output Capacitance (typ)@vds: 0.9@5V@Amp A/0.85@5V@Amp BpF
• Reverse Capacitance (typ): 0.02@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 180mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934060847115; BF1210 T/R; BF1210 T/R

NXP Semiconductors
2. Pinning information
3. Ordering information
BF1210_1
Product data sheet
1.4 Quick reference data
Table 1.
Per MOSFET unless otherwise specified.
[1]
[2]
Table 2.
Table 3.
Symbol Parameter
V
I
P
C
C
NF
Xmod
T
Pin
1
2
3
4
5
6
Type number
BF1210
y
D
j
DS
tot
fs
iss(G1)
rss
T
Calculated from S-parameters.
sp
is the temperature at the soldering point of the source lead.
drain-source voltage
drain current
total power dissipation
forward transfer admittance
input capacitance at gate1
reverse transfer capacitance f = 100 MHz
noise figure
cross modulation
junction temperature
Quick reference data
Discrete pinning
Ordering information
Description
gate1 (AMP A)
gate2
gate1 (AMP B)
drain (AMP B)
source
drain (AMP A)
Package
Name
-
Rev. 01 — 25 October 2006
Description
plastic surface-mounted package; 6 leads
Conditions
DC
T
amplifier A; I
amplifier B; I
f = 100 MHz
amplifier A; f = 400 MHz
amplifier B; f = 800 MHz
input level for k = 1 % at
40 dB AGC
sp
amplifier A
amplifier B
amplifier A
amplifier B
107 C
D
D
Simplified outline
= 19 mA
= 13 mA
Dual N-channel dual gate MOSFET
1
6
5
2
[1]
[2]
[2]
3
4
Min
-
-
-
26
28
-
-
-
-
-
100
100
-
Symbol
© NXP B.V. 2006. All rights reserved.
G1A
G1B
Typ
-
-
-
31
33
2.2
1.9
20
0.9
1.2
105
103
-
G2
BF1210
AMP A
AMP B
Max Unit
6
30
180
41
43
2.7
2.4
-
1.5
1.9
-
-
150
Version
SOT363
sym119
V
mA
mW
mS
mS
pF
pF
fF
dB
dB
dB V
dB V
2 of 21
C
DA
S
DB