BF556B,215 NXP Semiconductors, BF556B,215 Datasheet - Page 9

• Manufacturer Part Number: BF556B,215
• Description: MOSFET N-CH 30V 10MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BF556B,215

• Package / Case: SST3 (SOT-23-3)
• Transistor Type: N-Channel JFET
• Voltage - Rated: 30V
• Current Rating: 13mA
• Configuration: Single
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 30 V
• Gate-source Cutoff Voltage: - 0.5 V to - 7.5 V
• Gate-source Breakdown Voltage: - 30 V
• Maximum Drain Gate Voltage: - 30 V
• Drain Current (idss At Vgs=0): 6 mA to 13 mA
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Frequency: -
• Gain: -
• Noise Figure: -
• Current - Test: -
• Voltage - Test: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934021480215; BF556B T/R; BF556B T/R

Philips Semiconductors
9397 750 13393
Product data sheet
Fig 16. Common-source transfer admittance; typical
Fig 18. Common-source output admittance;typical
b
g
os ,
fs
(mS)
(mS)
(1) g
(2)
(1) b
(2) g
, b
10
10
10
g
10
10
os
fs
1
1
1
1
2
V
values.
V
values.
10
10
fs
b
os
os
DS
DS
.
fs
.
.
.
= 10 V; I
= 10 V; I
D
D
= 1 mA; T
= 1 mA; T
10
10
amb
amb
2
2
(1)
(2)
= 25 C.
= 25 C.
(1)
(2)
f (MHz)
f (MHz)
mrc141
mrc143
10
10
Rev. 03 — 5 August 2004
3
3
BF556A; BF556B; BF556C
Fig 17. Common-source reverse admittance; typical
Fig 19. Equivalent noise voltage as a function of
N-channel silicon junction field-effect transistors
b
(mS)
rs ,
(1) b
(2) g
(V)
V
10
10
10
10
n
10
g
10
10
rs
1
1
1
2
3
3
2
V
values.
V
frequency.
10
10
rs
rs
DS
DS
.
.
= 10 V; I
= 10 V; I
10
D
D
2
= 1 mA; T
= 1 mA.
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
10
10
amb
2
3
= 25 C.
(1)
(2)
f (MHz)
10
4
f (Hz)
mrc144
mrc278
10
10
3
5
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