BF556B,215 NXP Semiconductors, BF556B,215 Datasheet - Page 10

• Manufacturer Part Number: BF556B,215
• Description: MOSFET N-CH 30V 10MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BF556B,215

• Package / Case: SST3 (SOT-23-3)
• Transistor Type: N-Channel JFET
• Voltage - Rated: 30V
• Current Rating: 13mA
• Configuration: Single
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 30 V
• Gate-source Cutoff Voltage: - 0.5 V to - 7.5 V
• Gate-source Breakdown Voltage: - 30 V
• Maximum Drain Gate Voltage: - 30 V
• Drain Current (idss At Vgs=0): 6 mA to 13 mA
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Frequency: -
• Gain: -
• Noise Figure: -
• Current - Test: -
• Voltage - Test: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934021480215; BF556B T/R; BF556B T/R

Philips Semiconductors
9. Package outline
Fig 20. Package outline.
9397 750 13393
Product data sheet
Plastic surface mounted package; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT23
1.1
0.9
A
max.
A
0.1
1
1
0.48
0.38
b
p
IEC
e 1
0.15
0.09
c
D
e
3.0
2.8
D
b p
3
TO-236AB
JEDEC
1.4
1.2
E
REFERENCES
0
Rev. 03 — 5 August 2004
2
1.9
e
w
0.95
B
M
e
1
scale
B
EIAJ
1
BF556A; BF556B; BF556C
2.5
2.1
H
E
N-channel silicon junction field-effect transistors
0.45
0.15
L
p
A
2 mm
A 1
0.55
0.45
Q
H E
0.2
E
v
detail X
PROJECTION
0.1
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
EUROPEAN
w
L p
A
Q
c
X
v
ISSUE DATE
M
97-02-28
99-09-13
A
SOT23
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