BF1100R,215 NXP Semiconductors, BF1100R,215 Datasheet - Page 9

• Manufacturer Part Number: BF1100R,215
• Description: MOSFET N-CH 14V 30MA SOT143R
• Manufacturer: NXP Semiconductors

Specifications of BF1100R,215

• Package / Case: SOT-143R
• Current Rating: 30mA
• Frequency: 800MHz
• Transistor Type: N-Channel Dual Gate
• Noise Figure: 2dB
• Current - Test: 10mA
• Voltage - Test: 9V
• Configuration: Dual
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 14 V
• Gate-source Breakdown Voltage: 13.2 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934036560215::BF1100R T/R::BF1100R T/R

NXP Semiconductors
handbook, halfpage
Dual-gate MOS-FETs
V
I
V
I
D
D
(mS)
DS
DS
Fig.21 Forward transfer admittance and phase as
(mS)
y fs
= 10 mA; T
= 10 mA; T
y is
10
10
10
10
= 9 V; V
= 9 V; V
10
1
1
2
2
1
10
Fig.19 Input admittance as a function of
10
a function of frequency; typical values.
G2
G2
amb
amb
= 4 V.
= 4 V.
= 25 C.
= 25 C.
frequency; typical values.
10
10
2
2
y fs
b is
g is
fs
f (MHz)
f (MHz)
MLD174
MLD172
10
10
Rev. 02 - 13 November 2007
3
3
10
10
1
(deg)
2
fs
handbook, halfpage
V
I
V
I
D
D
Fig.20 Reverse transfer admittance and phase as
( S)
DS
DS
(mS)
y rs
= 10 mA; T
=10 mA; T
y os
10
10
10
10
10
= 9 V; V
= 9 V; V
10
1
1
3
2
Fig.22 Output admittance as a function of
1
2
10
10
a function of frequency; typical values.
G2
G2
amb
amb
= 4 V.
= 4 V.
= 25 C.
frequency; typical values.
= 25 C.
BF1100; BF1100R
10
10
2
2
y rs
b os
g os
rs
f (MHz)
f (MHz)
Product specification
MLD173
MLD175
10
9 of 15
10
3
3
10
10
10
1
(deg)
rs
3
2