BF1100R,215 NXP Semiconductors, BF1100R,215 Datasheet - Page 6

• Manufacturer Part Number: BF1100R,215
• Description: MOSFET N-CH 14V 30MA SOT143R
• Manufacturer: NXP Semiconductors

Specifications of BF1100R,215

• Package / Case: SOT-143R
• Current Rating: 30mA
• Frequency: 800MHz
• Transistor Type: N-Channel Dual Gate
• Noise Figure: 2dB
• Current - Test: 10mA
• Voltage - Test: 9V
• Configuration: Dual
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 14 V
• Gate-source Breakdown Voltage: 13.2 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934036560215::BF1100R T/R::BF1100R T/R

NXP Semiconductors
handbook, halfpage
handbook, halfpage
Dual-gate MOS-FETs
V
T
V
T
j
j
G2-S
DS
( A)
(mA)
I G1
= 25 C.
= 25 C.
I D
= 9 to 12 V.
250
200
150
100
Fig.9
Fig.7 Output characteristics; typical values.
20
16
12
50
= 4 V.
8
4
0
0
0
0
Gate 1 current as a function of gate 1
voltage; typical values.
4
1
V
G1 S
8
V
1.0 V
1.3 V
1.2 V
1.1 V
0.9 V
G2 S
= 1.4 V
= 4 V
2
3 V
3.5 V
2.5 V
2 V
V
12
G1 S
V
DS
MLD161
MLD159
(V)
(V)
Rev. 02 - 13 November 2007
16
3
handbook, halfpage
handbook, halfpage
V
T
V
T
j
j
DS
(mS)
DS
(mA)
Fig.10 Forward transfer admittance as a function
= 25 C.
= 25 C.
y fs
I D
= 9 to 12 V.
Fig.8 Transfer characteristics; typical values.
= 9 to 12 V.
20
16
12
40
30
20
10
8
4
0
0
0
0
of drain current; typical values.
0.4
10
0.8
V
G2 S
BF1100; BF1100R
= 4 V
1.2
2 V
20
V
Product specification
3 V
G2 S
I
1.6
D
V
2.5 V
2 V
1.5 V
1 V
(mA)
G1 S
3.5 V
3 V
2.5 V
= 4 V
MLD162
MLD160
6 of 15
(V)
2.0
30