ON5520,215 NXP Semiconductors, ON5520,215 Datasheet - Page 5

• Manufacturer Part Number: ON5520,215
• Description: MOSFET RF SOT23 TO-236AB
• Manufacturer: NXP Semiconductors

Specifications of ON5520,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Power - Output: -
• Frequency: -
• Gain: -
• Transistor Type: -
• Noise Figure: -
• Current - Test: -
• Voltage - Test: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934063418215

NXP Semiconductors
7. Characteristics
ON5520_1
Product data sheet
Table 6.
T
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
C
C
C
t
t
Source-drain diode
V
t
Q
DSS
GSS
on
off
rr
j
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
r
= 25 C unless otherwise specified.
Parameter
drain-source breakdown
voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
input capacitance
output capacitance
reverse transfer
capacitance
turn-on time
turn-off time
source-drain voltage
reverse recovery time
recovered charge
Characteristics
Rev. 01 — 24 March 2009
Conditions
I
I
V
and
V
V
V
I
see
V
see
V
f = 1 MHz; see
V
V
R
I
see
I
dI
V
D
D
D
S
S
DS
DS
GS
GS
GS
GS
DS
GS
GS
GS
S
T
T
T
T
T
T
T
T
T
= 300 mA; V
= 300 mA;
= 10 A; V
= 0.25 mA;
= 500 mA;
/dt = 100 A/ s;
j
j
j
j
j
j
j
j
j
Figure 6
Figure 6
Figure 11
= V
10
= 48 V; V
= 50 V; R
= 25 C
= 55 C
= 25 C
= 150 C
= 55 C
= 25 C
= 150 C
= 15 V; V
= 10 V;
= 25 C
= 150 C
= 4.5 V; I
= 0 V; V
= 10 V; R
= 0 V
= 50
GS
; see
DS
GS
and
and
D
GS
L
G
GS
DS
= 75 mA;
Figure 12
= 250 ;
= 10 V;
Figure 9
= 50 ;
= 0 V
= 0 V
8
8
= 0 V;
= 0 V
N-channel TrenchMOS FET
Min
60
55
1.6
0.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
2
-
-
0.01
-
10
2.8
-
3.8
31
6.8
3.5
2.5
11
0.85
30
30
© NXP B.V. 2009. All rights reserved.
ON5520
Max
-
-
2.1
-
2.75
1
10
100
5
9.25
5.3
50
30
10
10
15
1.5
-
-
Unit
V
V
V
V
V
nA
pF
pF
pF
ns
ns
V
ns
nC
5 of 11
A
A