ON5520,215 NXP Semiconductors, ON5520,215 Datasheet
ON5520,215
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ON5520,215 Summary of contents
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ON5520 N-channel TrenchMOS FET Rev. 01 — 24 March 2009 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using TrenchMOS technology. This type is a selection ...
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... NXP Semiconductors 3. Ordering information Table 2. Type number Package ON5520 4. Marking Table 3. Type number ON5520 [ made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol DGR GSM tot ...
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... NXP Semiconductors 120 P der (%) 100 P tot P = ------------------------ 100 % der P tot 25 C Fig 1. Normalized total power dissipation as a function of solder point temperature ( single pulse sp DM Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage ON5520_1 Product data sheet 03aa17 ...
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... NXP Semiconductors 6. Thermal characteristics Table 5. Symbol R th(j-sp) R th(j-a) [1] Mounted on a Printed-Circuit Board (PCB); minimum footprint; vertical in still air th(j-sp) (K/ 0.5 0.2 0.1 10 0.05 0.02 single pulse Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration ON5520_1 Product data sheet ...
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... NXP Semiconductors 7. Characteristics Table unless otherwise specified. j Symbol Static characteristics V (BR)DSS V GS(th) I DSS I GSS R DSon Dynamic characteristics C iss C oss C rss off Source-drain diode ON5520_1 Product data sheet Characteristics Parameter Conditions drain-source breakdown voltage gate-source threshold I = 0.25 mA; D voltage and 150 C ...
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... NXP Semiconductors (A) 0.8 0.6 0.4 0 Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values (A) 0.8 0.6 0 150 and 150 Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values ON5520_1 Product data sheet 003aab352 10000 DSon (m ) 8000 4 ...
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... NXP Semiconductors 3 V max GS(th) (V) typ 2 min 0.25 mA Fig 9. Gate-source threshold voltage as a function of junction temperature (A) 0.8 0.6 0.4 0.2 150 C 0 0.2 0.4 0 and 150 Fig 11. Source current as a function of source-drain voltage; typical values ON5520_1 Product data sheet 003aab101 ...
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... NXP Semiconductors 8. Package outline Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 Fig 13. Package outline SOT23 ON5520_1 Product data sheet scale 3.0 1.4 2.5 1.9 0.95 2.8 1 ...
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... NXP Semiconductors 9. Revision history Table 7. Revision history Document ID Release date ON5520_1 20090324 ON5520_1 Product data sheet Data sheet status Change notice Product data sheet - Rev. 01 — 24 March 2009 ON5520 N-channel TrenchMOS FET Supersedes - © NXP B.V. 2009. All rights reserved ...
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... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
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... NXP Semiconductors 12. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 10 Legal information 10.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 10.2 Defi ...