PD57060S-E STMicroelectronics, PD57060S-E Datasheet - Page 5

TRANS RF N-CH FET LDMOST PWRSO10

PD57060S-E

Manufacturer Part Number
PD57060S-E
Description
TRANS RF N-CH FET LDMOST PWRSO10
Manufacturer
STMicroelectronics
Datasheet

Specifications of PD57060S-E

Transistor Type
LDMOS
Frequency
945MHz
Gain
14.3dB
Voltage - Rated
65V
Current Rating
7A
Current - Test
100mA
Voltage - Test
28V
Power - Output
60W
Package / Case
PowerSO-10 Exposed Bottom Pad
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
7A
Drain Source Voltage (max)
65V
Output Power (max)
60W(Min)
Power Gain (typ)@vds
14.3dB
Frequency (max)
1GHz
Package Type
PowerSO-10RF (Straight lead)
Pin Count
4
Forward Transconductance (typ)
2.5(Min)S
Input Capacitance (typ)@vds
83@28VpF
Output Capacitance (typ)@vds
58@28VpF
Reverse Capacitance (typ)
3@28VpF
Operating Temp Range
-65C to 165C
Drain Efficiency (typ)
54%
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
79000mW
Vswr (max)
5(Min)
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
497-5310-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PD57060S-E
Manufacturer:
ST
Quantity:
210
Part Number:
PD57060S-E
Manufacturer:
STMicroelectronics
Quantity:
135
Part Number:
PD57060S-E
Manufacturer:
ST
0
Part Number:
PD57060S-E
Manufacturer:
ST
Quantity:
20 000
PD57060-E
3
Impedances
Figure 2.
Table 7.
Freq. (MHz)
890 MHz
925 MHz
945 MHz
960 MHz
Current conventions
Impedance data
Doc ID 11758 Rev 4
0.646 + j 0.694
0.568 + j 0.372
0.705 + j 0.692
0.591 + j 1.039
Z
IN
(Ω)
1.577 - j 0.997
1.427 - j 1.459
1.278 - j 1.935
1.173 - j 2.464
Z
DL
(Ω)
Impedances
5/21

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