VRF157FL Microsemi Power Products Group, VRF157FL Datasheet
VRF157FL
Specifications of VRF157FL
VRF157FLMP
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VRF157FL Summary of contents
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... RF POWER VERTICAL MOSFET The VRF157FL is a gold-metallized silicon n-channel RF power transis- tor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter- modulation distortion. FEATURES • Improved Ruggedness V = 170V (BR)DSS • 600W with 17dB Typical Gain @ 30MHz, 50V • ...
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... DQ out = 800mA 600W DQ out PEP = 50V 800mA 600W DD DQ out 100 4.5V 3.5V 2.5V 1.5V . 100 C iss C oss 10 C rss 75 100 VRF157FL Min Typ Max 1580 810 65 Min Typ Max -25 1 PEP 250μs PULSE TEST<0.5 % DUTY 90 CYCLE -55° 25° ...
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D = 0.9 0.12 0.10 0.7 0.08 0.5 0.06 0.3 0.04 0.02 0.1 0. Figure 5. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration 1200 Freq=30MHz 1000 800 600 400 200 0 0 ...
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... R10, R11 - 100 Ohms, 1.0W Carbon R14, R15 - EMC Technology Model 5308 or KDI Pyrofilm PPR 970-150-3 Power Resistors, 25 Ohms T1 9:1 and 1:9 Impedance Ratio RF Transformers G .500 .150r .750 1.000 1 2 .500 4 .300 .200 .005 .040 PIN 1 - DRAIN PIN 2 - SOURCE PIN 3 - SOURCE PIN 4 - GATE VRF157FL ...